Authors | Said Benramache1 , Boubaker Benhaoua2 |
Affiliations | 1 Material Sciences Department, Faculty of Science, University of Biskra, Biskra 070000, Algeria 2 VTRS Laboratory, Institute of Technology, University of El-Oued, El-Oued 39000, Algeria |
Е-mail | saidbenramache07@gmail.com |
Issue | Volume 8, Year 2016, Number 3 |
Dates | Received 12 April 2016; published online 03 October 2016 |
Citation | Said Benramache, Boubaker Benhaoua, J. Nano- Electron. Phys. 8 No 3, 03014 (2016) |
DOI | 10.21272/jnep.8(3).03014 |
PACS Number(s) | 77.55.hf, 81.20.Fw |
Keywords | ZnO (92) , Thin film (101) , Precursor molarity, Sol-Gel technique. |
Annotation | We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate at different solution molarities of 0.1, 0.3 and 0.5 mol/l of zinc acetate dehydrate. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G 69.32 nm is measured wi 0.5 mol/l. The thin film exhibit an average optical transparency is over 80 % at high molarity, in the visible region, found that the optical band gap energy was increased up to 3.25 eV at 0.5 mol/l. The minimum value of Urbach energy of ZnO thin film was achieved with 0.5 mol/l. |
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