Formation of Device Structures Spin-valve Type Based on Co and Cu

Authors I.V. Cheshko , M.V. Kostenko, V.I. Hrebynakha1, A.M. Lohvynov, S.I. Protsenko

Sumy State University, 2, Rimsky Korsakov st., 40007 Sumy, Ukraine

1 National Technical University of Ukraine «КPI», 37, Peremogy prosp., 03056 Kyiv, Ukraine

Issue Volume 8, Year 2016, Number 3
Dates Received 23 May 2016; published online 03 October 2016
Citation I.V. Cheshko, M.V. Kostenko, V.I. Hrebynakha, et al., J. Nano- Electron. Phys. 8 No 3, 03041 (2016)
DOI 10.21272/jnep.8(3).03041
PACS Number(s) 68.55.Ln, 73.50.Jt
Keywords Spin-valve (2) , Magnetoresistance (6) , Coercive force (2) , Magnetization (18) , Solid Solution (6) .
Annotation The study results of structural-phase state and magnetoresistive properties of spin-valve type nano-film based on Co and Cu are shown in this work. It is found that in these systems during the preparation and annealing at temperatures Tann  700 and 900 K solid solutions of Co atoms in Cu matrix are formed. Was shown that the spin-valve type film system Co (5)/Cu(x)/Co(20)/S expedient modified using multilayers [Co/Cu]n instead one of the magnetic Co layer. This modification increases the magnetoresistance values up to 0,3 ÷ 0,5 %, increases the switching speed from one magnetic state to another and thermal stability of nanosystems to temperature 700 K. Although magnetic sensitivity decreases to a value SB  (0,1 ÷ 0 2)  10 – 2 % / mT.

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