Formation of Device Structures Spin-valve Type Based on Co and Cu
| Authors | I.V. Cheshko , M.V. Kostenko, V.I. Hrebynakha1, A.M. Lohvynov, S.I. Protsenko |
| Affiliations | Sumy State University, 2, Rimsky Korsakov st., 40007 Sumy, Ukraine 1 National Technical University of Ukraine «КPI», 37, Peremogy prosp., 03056 Kyiv, Ukraine |
| Е-mail | i.cheshko@aph.sumdu.edu.ua |
| Issue | Volume 8, Year 2016, Number 3 |
| Dates | Received 23 May 2016; published online 03 October 2016 |
| Citation | I.V. Cheshko, M.V. Kostenko, V.I. Hrebynakha, et al., J. Nano- Electron. Phys. 8 No 3, 03041 (2016) |
| DOI | 10.21272/jnep.8(3).03041 |
| PACS Number(s) | 68.55.Ln, 73.50.Jt |
| Keywords | Spin-valve (2) , Magnetoresistance (6) , Coercive force (2) , Magnetization (18) , Solid Solution (6) . |
| Annotation | The study results of structural-phase state and magnetoresistive properties of spin-valve type nano-film based on Co and Cu are shown in this work. It is found that in these systems during the preparation and annealing at temperatures Tann 700 and 900 K solid solutions of Co atoms in Cu matrix are formed. Was shown that the spin-valve type film system Co (5)/Cu(x)/Co(20)/S expedient modified using multilayers [Co/Cu]n instead one of the magnetic Co layer. This modification increases the magnetoresistance values up to 0,3 ÷ 0,5 %, increases the switching speed from one magnetic state to another and thermal stability of nanosystems to temperature 700 K. Although magnetic sensitivity decreases to a value SB (0,1 ÷ 0 2) 10 – 2 % / mT. |
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List of References English version of article |
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