The Photoelectric Properties of Intrinsic Oxide - p-In4Se3 Heterojunctions

Authors	V.N. Katerynchuk¹, Z.D. Kovalyuk¹ , B.V. Kushnir¹, O.S. Litvin²
Affiliations	¹ Frantsevich Institute for Problems of Materials Science of NAS of Ukraine, Chernivtsi Department, 5, I. Vilde st., 58001 Chernivtsi, Ukraine ² Lashkarev Institute of Semiconductor Physics of NAS of Ukraine, 45, Nauky Ave., 03028 Kyiv, Ukraine
Е-mail	KushnirBV@gmail.com
Issue	Volume 8, Year 2016, Number 3
Dates	Received 15 March 2016; published online 03 October 2016
Citation	V.N. Katerynchuk, Z.D. Kovalyuk, B.V. Kushnir, O.S. Litvin, J. Nano- Electron. Phys. 8 No 3, 03032 (2016)
DOI	10.21272/jnep.8(3).03032
PACS Number(s)	61.43.Dq, 75.50.Pp, 75.60Ej
Keywords	Indium selenide, Layered crystals, Heterojunctions, Spectral characteristics, Current-voltage characteristics (3) .
Annotation	The intrinsic oxide - p-In4Se3 heterojunction was fabricated by the method of thermal oxidation of semiconductor substrate for the first time. The qualitative energy band diagram was built on the basis of analysis of electrical and photovoltaic characteristics of the heterojunction. The character of dominating current transport mechanisms through the barrier is determined by thermionic emission, rather than carrier diffusion. The AFM-images of oxide layer surface and the photosensitivity spectrum of intrinsic oxide  p-In4Se3 heterojunctions also were presented.
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