Автори | Suraj Mangavati1, Ashok Rao1 , Dheeraj Devadiga2, M. Selvakumar2, Monika Saxena3, G.S. Okram3 |
Афіліація |
1Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India 2Department of Chemistry, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India 3UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, 452017 Indore, India |
Е-mail | ashokanu_rao@rediffmail.com |
Випуск | Том 13, Рік 2021, Номер 1 |
Дати | Received 12 January 2021; revised manuscript received 18 February 2021; published online 25 February 2021 |
Цитування | Suraj Mangavati, Ashok Rao, et al., J. Nano- Electron. Phys. 13 No 1, 01026 (2021) |
DOI | https://doi.org/10.21272/jnep.13(1).01026 |
PACS Number(s) | 61. 05.Cp, 62.23.Pq, 72. 15.Eb, 72.15.Jf |
Ключові слова | Electrical resistivity (5) , Mobility (10) , Activation energy (7) , Thermopower (2) , Low temperature (3) . |
Анотація |
ZnO/rGO composites are prepared by the conventional solid-state reaction method. Structural properties of prepared compounds were studied using XRD technique and it is observed that all the samples are crystallized in wurtzite structure. Electrical resistivity measurements were carried out using four probe method employing a closed cycle refrigerator. With addition of rGO, colossal reduction in the resistivity is observed which is about three orders of magnitude smaller than that of the pure sample of ZnO. Room temperature Hall measurements were performed to estimate the bulk concentration and results show that addition of rGO into ZnO matrix enhances the number of charge carriers. Thermopower measurements were carried out using differential dc method and a large reduction in Seebeck coefficient is observed. |
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