Strategic Review of Arsenide, Phosphide and Nitride MOSFETs
| Автори | Gourab Dutta, Palash Das , Partha Mukherjee, Dhrubes Biswas |
| Приналежність | Indian Institute of Technology-Kharagpur Kharagpur, West Bengal 721 302 |
| Е-mail | gdutta.iitkgp@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 4 |
| Дати | Received 04 February 2011, , published online 17 October 2011 |
| Посилання | Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas, J. Nano- Electron. Phys. 3 No1, 728 (2011) |
| DOI | |
| PACS Number(s) | 85.30.TV |
| Ключові слова | Review, Arsenide (4) , Phosphide (2) , Nitride (15) , MOSFET (29) , Comparison. |
| Анотація |
Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses. |
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