Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates
| Автори | C.K. Sumesh1, K.D. Patel2 , V.M. Pathak2 , R.Srivastava2 |
| Афіліація | 1 Department of Physics, Charotar Institute of Technology, Charusat, Changa, 388 420, Anand, India 2 Department of Physics, Sardar patel University, V.V. Nagar, 388 120, Anand, India |
| Е-mail | cksumesh.cv@ecchanga.ac.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 4 |
| Дати | Received 04 February 2011, published online 17 October 2011 |
| Цитування | C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava, J. Nano- Electron. Phys. 3 No1, 709 (2011) |
| DOI | |
| PACS Number(s) | 85.30.Tv, 85.30.Kk, 73.40.Ei |
| Ключові слова | MoSe2 (2) , MESFET (2) , Ohmic contact (5) , Schottky contact (5) , I-V analysis. |
| Анотація |
Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials. |
|
Перелік посилань |
Інші статті цього номера
1) Photoluminescence and EPR Studies of ZnS Nanoparticles Co-Doped With Mn and Te [0639-0646]2) Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology [0647-0650]
3) Inter-Electrode Separation Induced Amorphous-to-Nanocrystalline Transition of Hydrogenated Silicon Prepared by Capacitively Coupled RF PE-CVD Technique [0651-0661]
4) Optical Fiber Based Spectral Response Measurement System for Multi-Junction Solar Cells [0662-0666]
5) Activation Energy of Polycrystalline Silicon Thin Film Transistor [0667-0670]
6) Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [0671-0675]
7) Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer [0676-0679]
8) A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [0680-0683]
9) Schottky Contact of Gallium on p-Type Silicon [0684-0690]
10) Enhancement in Thermoelectric Power in Lead Telluride Nanocomposite: Role of Oxygen Vis-À-Vis Nanostruct [0691-0697]
11) Structural, Optical, and Dielectric Properties of A[(Mg0.32Co0.02) Nb0.66]O3 Semiconductor, Where (a = Ba, Sr or Ca) [0698-0708]
12) Studies on Metal-Oxide Semiconductor ZnO as a Hydrogen Gas Sensor [0714-0720]
13) The optimization of optical thin films deposition using in-situ reflectivity measurements and simulation [0721-0727]
14) Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [0728-0740]
15) MoSe2 / Polyaniline Solar Cells [0741-0746]
16) Simulation of CIGS Thin Film Solar Cells Using AMPS-1D [0747-0754]
17) Magnetron Sputtered Al-ZnO Thin Films for Photovoltaic Applications [0755-0765]
18) Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell [0766-0775]
19) A Nano-Biosensor for DNA Sequence Detection Using Absorption Spectra of SWNT-DNA Composite [0776-0782]
20) Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [0783-0786]
21) Design Optimization of Deflection Caused After Release of Multilayer Structural Membrane of Symmetric Toggle Switch [0787-0791]
22) An Effective Modeling Approach for High Efficient Solar Cell Using Virtual Wafer Fabrication Tools [0792-0801]
23) Fabrication and Time Degradation Study of Mercuric Iodide (Red) Single Crystal X-Ray Detector [0802-0807]
24) Electrostatics of Silicon Nano Transistor [0808-0813]
25) Spatial Confinement of Optical Phonons in ZnO Nanowalls and Nanorods [0814-0817]
26) P-V Relation for Mercuric Calcogenides: Ab Initio Method [0818-0822]
27) On the Possibility of Enhanced Efficiency in (Zn, Cd)S Dye Sensitized Solar Cell [0823-0831]
28) Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [0832-0837]
