Schottky Contact of Gallium on p-Type Silicon
| Автори | B.P. Modi1, K.D. Patel2 |
| Приналежність | 1 Department of Physics, Veer Narmad South Gujarat University, Surat-395 007, India 2 Departments of Physics, Sardar Patel University, Vallabh Vidyanagar-388 120, India |
| Е-mail | bharatpmodi.bharuch@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 4 |
| Дати | Received 04 February 2011, published online 17 October 2011 |
| Посилання | B.P. Modi, K.D. Patel, J. Nano- Electron. Phys. 3 No1, 684 (2011) |
| DOI | |
| PACS Number(s) | 73.30 + y, 73.20 – r |
| Ключові слова | Schottky contact (5) , Thin film (101) , Interfacial strain, Barrier height (11) , Flat band barrier height, Ideality factor (10) . |
| Анотація |
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed. |
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Перелік посилань |
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