Автори | D.Yu. Matveev |
Афіліація | Astrakhan State University, 20a, Tatischev st., 4140056 Astrakhan, Russia |
Е-mail | Danila200586@mail.ru |
Випуск | Том 8, Рік 2016, Номер 3 |
Дати | Одержано 15.05.2016, опубліковано online - 03.10.2016 |
Цитування | D.Yu. Matveev, J. Nano- Electron. Phys. 8 No 3, 03012 (2016) |
DOI | 10.21272/jnep.8(3).03012 |
PACS Number(s) | 73.50.Gr, 73.50.Jt |
Ключові слова | Thin films (60) , Bismuth (9) , Tellurium (3) , Mobility (10) , Size effect (6) . |
Анотація | The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
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