Irradiation Effects on Microstructure and Dielectric Properties of Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] Thin Films

Authors N.V. Patel1, Bhagwati Bishnoi1, P.K. Mehta1 , Ravi Kumar2, R.J. Choudhary3, D.M. Phase3, V. Ganesan3, C.J. Panchal4

1 Department of Physics, Faculty of Science, the M. S. University of Baroda, Vadodara, 390 002 India

3 UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452017 India

4 Applied Physics Department, Faculty of Technology & Engineering, The M. S. University of Baroda, Vadodara, 390001 Gujarat, India

Issue Volume 4, Year 2012, Number 4
Dates Received 31 July 2012; published online 29 December 2012
Citation N.V. Patel, Bhagwati Bishnoi, P.K. Mehta, et al., J. Nano- Electron. Phys. 4 No 4, 04001 (2012)
PACS Number(s) 61.80.Jh, 77.55. + f
Keywords Microstructure and dielectric properties, Thin films (60) , SHI irradiation.
Annotation Ba[(Mg0.32Co0.02)Nb0.66]O3 [BMCN] thin films prepared on Pt-Si, MgO, Silicon and ITO coated glass substrates by Pulsed Laser Deposition Technique are investigated. Relative growth parameters suggest that ITO coated glass substrate has good potential for growing films with near Nano size columnar grains. In comparison to bulk, dielectric constant and dielectric loss increases in BMCN films. This undesirable rise in dielectric loss can be drastically reduced by a factor of more than 1/100th times through Ag15+ ion irradiation at 1 × 1012 ions/cm2 dose.

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