Photodetectors on the Basis of Porous Silicon

Authors I.B. Olenych , L.S. Monastyrskii , B.S. Sokolovskii

Ivan Franko National University of Lviv, 50, Dragomanov Str., 79005 Lviv, Ukraine

Issue Volume 4, Year 2012, Number 3
Dates Received 02 August 2012; published online 07 November 2012
Citation I.B. Olenych, L.S. Monastyrskii, B.S. Sokolovskii, J. Nano- Electron. Phys. 4 No 3, 03025 (2012)
PACS Number(s) 73.50.Pz, 73.63. – b
Keywords Porous silicon (3) , Adsorption (9) , Photodetector (8) , Photoresponse, Spectral characteristics, Current-voltage characteristics (3) .
Annotation The paper studies the electrical characteristics of photodiode structures porous silicon – silicon substrates modified with molecules of iodine. Changes the nature of current-voltage characteristics obtained structures with symmetrical for straightening result of adsorption of iodine are revealed. It is studied the spectral characteristics of photoresponse in the 450-1100 nm wavelength range, its temperature dependence in the 125-325 K range and energy characteristics of photovoltaic structures based on porous silicon. A possible mechanism of influence of iodine adsorption on the electrical and photoelectrical properties of the structures of porous silicon – silicon substrates is proposed. The results extend the perspectives of porous silicon in photoelectronics.

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