DFT Performance Analysis of Graphene Nanoribbon FET with Gate Stack for Low Power Applications

Authors Ritam Dutta1, Debmitra Das2
Affiliations

1Dept. of CSE (IoT), Poornima Institute of Engineering & Technology, Jaipur, India

2Dept. of CSE, Poornima University, Jaipur, India

Е-mail ritamdutta1986@gmail.com
Issue Volume 17, Year 2025, Number 3
Dates Received 05 April 2025; revised manuscript received 18 June 2025; published online 27 June 2025
Citation Ritam Dutta, Debmitra Das, J. Nano- Electron. Phys. 17 No 3, 03022 (2025)
DOI https://doi.org/10.21272/jnep.17(3).03022
PACS Number(s) 81.05.ue, 85.30.Pq
Keywords AGN (137) , GS-GNFET, DIBL (7) , DFT (36) , DDOS, TP (8) .
Annotation

This article presents the improved device performance of graphene nanoribbon field effect transistor with novel structure. In this proposed structure, number of carbon atoms are varied along armchair graphene nanoribbon (AGN) width (n), across the channel. The channel material is developed with gate stack approach. Moreover, the carrier transport using huckel extended (HE) model-based density functional theory (DFT) is studied. The rise in the value of 'n' from 4 to 8 in the channel material enhances the ON current (ION), reduces OFF current (IOFF), improves the switching ratio, and reduces threshold voltage (Vth) 29 %, results reduced drain induced barrier lowering (DIBL) in A8 device (GS-GNFET with AGN (n = 8) in channel material) as compared with A4 device having (GS-GNFET with AGN (n = 8) in channel material). The device density of states (DDOS) analysis confirms higher electron occupation and better performance of A8 device compared to A4 device model. The tight-binding Hamiltonian matrix is solved using the HE model and a semi-empirical calculator. A 33 % improvement in ON current and a 76 % reduction in OFF current have been recorded in our proposed GS-GNFET device model over conventional GNRFET. Moreover, the A8 device has a very low value of static power (1.69 × 10 – 13 watt) compared to pre-established experimental data recorded through literature survey.

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