Electrical and Photoelectrical Properties of ZnFe2O4/InSe Heterojunctions

Authors I.G. Tkachuk1,2, V.I. Ivanov1 , I.G. Orletskii3, V.B. Boledzuk1, M.Z. Kovalyuk1, A.Ya. Struk3, E.G. Makhrova2
Affiliations

1Сhernivtsi Branch of Frantsevych Institute of Problems of Materials National Academy of Sciences of Ukraine, 58001 Chernivtsi, Ukraine

2Bukovinian State Medical University, 58000 Chernivtsi, Ukraine

3Yuriy Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine

Е-mail ivan.tkachuk.1993@gmail.com
Issue Volume 17, Year 2025, Number 3
Dates Received 02 April 2025; revised manuscript received 15 June 2025; published online 27 June 2025
Citation I.G. Tkachuk, V.I. Ivanov, et al., J. Nano- Electron. Phys. 17 No 3, 03001 (2025)
DOI https://doi.org/10.21272/jnep.17(3).03001
PACS Number(s) 73.40. – c, 78.66. – w
Keywords Indium Selenide, Heterostructures (2) , Spray pyrolysis (9) , I-V Characteristics (2) , Photosensitivity.
Annotation

Photosensitive n-ZnFe2O4/p-InSe heterojunctions were fabricated by low-temperature spray pyrolysis. An aqueous solution of the appropriate composition was sprayed onto a heated InSe layered crystal substrate. As a result, a thin film of ZnFe2O4 was formed on its surface. The use of layered semiconductors as a substrate allows obtaining high-quality interfaces due to the absence of broken bonds on its surface. The photoelectric and optical properties of the obtained heterojunction were studied, and the corresponding graphical dependences were constructed: current-voltage characteristics at different temperatures, temperature dependence of the potential barrier height, spectral dependence of the relative quantum efficiency in the photon energy range of 1.2 ÷ 3.1 eV. Based on the analysis of the temperature dependences of forward and reverse current-voltage characteristics, the energy parameters of the heterojunction were calculated. The mechanisms of the formation of forward and reverse currents through the ZnFe2O4/InSe energy barrier were determined.

List of References