Authors | M. Hebali1 , 2 , M. Bennaoum1 , H.A. Azzeddine1, B. Ibari1 , M. Benzohra3, D. Chalabi2 |
Affiliations |
1Department of Electrotechnical, University Mustapha STAMBOULI Mascara, 29000 Mascara, Algeria 2Laboratory CaSiCCe, ENP Oran-MA, 31000 Oran, Algeria 3Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP, 76000, France
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Е-mail | mourad.hebali@univ-mascara.dz |
Issue | Volume 12, Year 2020, Number 6 |
Dates | Received 13 June 2020; revised manuscript received 21 December 2020; published online 25 December 2020 |
Citation | M. Hebali, M. Bennaoum, et al., J. Nano- Electron. Phys. 12 No 6, 06033 (2020) |
DOI | https://doi.org/10.21272/jnep.12(6).06033 |
PACS Number(s) | 81.07.Gf |
Keywords | Silicon (58) , Solar nanocell, Silicon nanowires (SiNWs), Static characteristic, Electrical parameters. |
Annotation |
Silicon nanowires (SiNWs) solar cells are becoming an important axis of scientific research especially in the field of new technologies for photovoltaic energy. In this paper, static characteristics (I-V, P-V) and different electrical parameters (ISC, VOC, Imax, Vmax, Pmax and FF) of the SiNWs solar nanocell are studied according to the number of nanowires (n) at room temperature and under global (AM1.5G) illumination spectra using 2D-Atlas SILVACO software. The simulation results show that the silicon nanowires (SiNWs) solar nanocell is characterized by good electrical characteristics and high performance. Increasing the number of nanowires is a good technique for improving the behavior and electrical performance of the SiNWs solar cells. |
List of References |