Electron-acoustic Phonon Interaction in AlAs/GaAlAs Resonance Tunneling Nanostructures
| Authors | I.V. Boyko , M.R. Petryk |
| Affiliations |
Ternopil Ivan Puluj National Technical University, 56, Ruska St., 46001 Ternopil, Ukraine |
| Е-mail | |
| Issue | Volume 12, Year 2020, Number 6 |
| Dates | Received 23 June 2020; revised manuscript received 15 December 2020; published online 25 December 2020 |
| Citation | I.V. Boyko, M.R. Petryk, J. Nano- Electron. Phys. 12 No 6, 06030 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(6).06030 |
| PACS Number(s) | 63.22.Np, 63.20.kd |
| Keywords | Acoustic phonon, Electron-phonon interaction, Dyson equation, Energy shift, Decay rate. |
| Annotation |
In paper, using exact solutions of the stationary Schrödinger equation and the equation of motion for an elastic semiconductor medium, using the secondary quantization formalism, the theory of interaction of electrons with acoustic phonons in a multilayer arsenide-based AlAs/GaAlAs resonant tunneling structure is developed. Using the Matsubara Green's functions and the Dyson equation, expressions, which describe the temperature energy shifts of electronic levels in the nanostructure and their decay rates, are established. Direct calculations of the quantities characterizing the interaction of electrons with acoustic phonons are performed on the basis of physical and geometric parameters of a typical nanostructure, and their dependences on the geometric design of the total potential well of the nanosystem at various temperatures are studied. It is shown that the influence of acoustic phonons leads to the decrease in the quantum electronic transitions frequency in the studied nanostructure, and this effect becomes more noticeable with increasing temperature. It has been established that the absolute values of the electronic stationary states temperature shifts decreases with the increase in the electronic stationary level number. Also, an increase in the temperature entails an increase in the electronic states decay rates that is a dissipation effect directly affecting electronic processes in nanostructures.Keywords: Acoustic phonon, Electron-phonon interaction, Dyson equation, Energy shift, Decay rate. |
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