Theoretical Investigation on Performance Enhancement of CIGS Based Solar Cells

Authors B. Barman, P.K. Kalita

Rajiv Gandhi University, Doimukh, Arunachal Pradesh 791112, India

Issue Volume 12, Year 2020, Number 6
Dates Received 26 September 2020; revised manuscript received 20 December 2020; published online 25 December 2020
Citation B. Barman, P.K. Kalita, J. Nano- Electron. Phys. 12 No 6, 06036 (2020)
PACS Number(s) 81.07.Bc, 79.60.Jv
Keywords CIGS (11) , Buffer layer (2) , Back surface layer, Temperature (46) , SCAPS-1D (21) .

The main objective of this work is to investigate the CIGS solar cell performance by replacing the toxic CdS buffer layer from the conventional solar cell structure Ag/ITO/ZnO/CdS/CIGS/W by the non-toxic ZnSe layer using SCAPS-1D software. J-V characteristics of the simulated cell structure show that the efficiency of the solar cell increases from 23.23 % to 23.58 % (with Voc of 0.8202 V, Jsc of 34.86 mA/cm2 and FF of 82.49 %) due to the use of ZnSe layer. The increase in the efficiency of the cell is attributed to the decrease in photon absorption in the buffer layer due to higher band gap of ZnSe. An additional thin layer was inserted between CIGS and the back contactW to eliminate the back surface recombination. This new layer provided an additional hole tunneling action which led to an increase in the solar cell efficiency up to 24.64 %. Moreover, an attempt has been made to investigate the dependence of the CIGS solar cellefficiency on the operating temperature.

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