Investigation of Carbon Nanotube FET with Coaxial Geometry

Authors P. Vimala , Likith Krishna L, Krishna Maheshwari, S.S. Sharma

Department of Electronics & Communication Engineering, Dayananda Sagar College of Engineering, Shavige Malleshwara Hills, Kumaraswamy Layout, Banashankari, Bengaluru 560078, Karnataka, India

Issue Volume 12, Year 2020, Number 5
Dates Received 20 July 2020; revised manuscript received 15 October 2020; published online 25 October 2020
Citation P. Vimala, Likith Krishna L., Krishna Maheshwari, S.S. Sharma, J. Nano- Electron. Phys. 12 No 5, 05027 (2020)
PACS Number(s) 73.40.Qv, 85.30.Hi
Keywords Carbon nanotube (21) , CNTFETs, Coaxial, I-V characteristics (2) , Semiconducting.

This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage (I-V) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor (n, m) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I-V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I-V characteristics and also to reveal the impact of high-k materials on I-V characteristics.

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