Sensitivity of a HIT c-Si Solar Cell to Structural Distortions of the Hydrogenated Amorphous Silicon Constituting the Front Face of the Device

Authors T. Belaroussi1, D. Rached1 , W.L. Rahal2,3 , F. Hamdache1

1Laboratoire de Physique des Plasmas, Matériaux Conducteurs et Leurs Applications, U.S.T.O.M.B. – B.P. 1505, El M’naouar, Oran, Algérie

2Laboratoire d’Analyse et d’Application des Rayonnements. U.S.T.O.M.B. – B.P. 1505, El M’naouar, Oran, Algérie

3Département de Physique, Faculté des Sciences Exactes et de l’Informatique, Université Abdelhamid Ibn Badis de Mostaganem, Algérie

Issue Volume 12, Year 2020, Number 5
Dates Received 21 July 2020; revised manuscript received 15 October 2020; published online 25 October 2020
Citation T. Belaroussi, D. Rached, W.L. Rahal, et al., J. Nano- Electron. Phys. 12 No 5, 05023 (2020)
PACS Number(s) 73.61.Jc, 71.20.Mq, 88.40.hj, 88.40.jj
Keywords Solar cells (17) , HIT (9) , Hydrogenated amorphous silicon (3) , Characteristic energies, ASDMP (2) , J-V characteristic.

In this article, we did a comparative study on two different types of high efficiency HIT (Heterojunctions with Intrinsic Thin layers) solar cells: ITO/p-a-Si:H/i-pm-Si:H/n-c-Si/Al and ITO/n-a-Si:H/i-pm-Si:H/p-c-Si/Al. The aim is to study the influence of the valence band tail width (characteristic energy ED) and the conduction band tail width (characteristic energy EA) of hydrogenated amorphous silicon present as emitter of these solar cells. Our investigations allowed us to conclude that in order to obtain good quality photovoltaic cells, it is important to adjust the different parameters that influence the hydrogenated amorphous silicon distortions used for the development of the HIT cell emitter. On HIT n-c-Si solar cell (ITO/p-a-Si:H/i-pm-Si:H/n-c-Si/Al), a decrease in ED reduces the recombination rate of the holes in the p-a-Si:H layer and thus increases the efficiency of the studied cells. The modification of EA of the conduction band does not influence the quality of the cells. For HIT p-c-Si solar cell (ITO/n-a-Si:H/i-pm-Si:H/p-c-Si/Al), the opposite phenomenon occurs. Indeed, a decrease in EA decreases the recombination rate of electrons in the n-a-Si:H layer and thus increases the efficiency of the studied cells. The modification of the characteristic energy ED of the valence band does not influence the performance of this type of cells.

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