Ozone Sensitive Properties of Thin Films of Nanocrystalline Silicon Carbide
| Authors | A.V. Semenov, D.V. Lubov, M.V. Makhonin |
| Affiliations |
National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov St., 61002 Kharkiv, Ukraine |
| Е-mail | savladi@ukr.net |
| Issue | Volume 12, Year 2020, Number 5 |
| Dates | Received 1 July 2020; revised manuscript received 15 October 2020; published online 25 October 2020 |
| Citation | A.V. Semenov, D.V. Lubov, M.V. Makhonin, J. Nano- Electron. Phys. 12 No 5, 05016 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(5).05016 |
| PACS Number(s) | 73.63. – Bd, 07.07.Df |
| Keywords | Ozone sensors, Silicon carbide (9) , Nanocrystalline film, Electrical resistance, Temperature ozone sensitivity. . |
| Annotation |
In this paper, we investigated the ability of nanocrystalline SiC films to detect ozone in an air mixture under atmospheric pressure for ozone concentrations of 0.1 mg/m3 (maximum allowable concentration) and 4.0 mg/m3. The ozone sensitivity coefficient S (О3) was estimated by the formula S (О3) (Rg – Ra)/Ra, where Rg and Ra are respectively the film resistances in the presence and absence of ozone in the air atmosphere. The volume flow rate of the ozone-air mixture was 2 l/min. The temperature dependence of the ozone sensitivity coefficient S (O3) was studied in the temperature range 100-450 C. It was found that the maximum values of S (O3) + 0.71 and – 0.80 were observed at temperatures of 280 C and 330 C, respectively, for both concentrations of ozone. Moreover, S (O3) had a positive sign for a temperature of 280 C and a negative value for 330 C. The different polarity of the change in the film resistance at given temperatures was due to the different ratio of redox reactions of ozone with atmospheric gases on the surface of nc-SiC films. Both temperatures can be used for detecting ozone with sensors on nc-SiC films, however, from the point of view of reducing energy consumption, operating temperature of 280 С looks more preferable. |
|
List of References |
Other articles from this number
1) The Physicochemical Characteristics of Silicon-Germanium Nanoclusters [05001-1-05001-5]2) Quasi-equilibrium Processes of Relaxation of the Electronic Excitation of the Azidomalachite Green Molecule [05002-1-05002-7]
3) First Principles DFT + U Calculations of the Electronic Properties of ZnO/GaN Heterostructure [05003-1-05003-6]
4) Mechanical Behavior of Particle Reinforced Thermoplastic Matrix Composites Using Finite Element Modeling [05004-1-05004-5]
5) Features of Ultrasonic Waves Influence on Different Types Biological Tissues [05005-1-05005-4]
6) The Optical Properties of Europium-doped Zinc Selenide Films [05006-1-05006-5]
7) Study of the Resonance Diffraction Phenomena on Gratings by the Rigorous Coupled Wave Method with Modified Equation System [05007-1-05007-6]
8) The Vision for Polymer Solar Cells is Power Production at Low Cost [05008-1-05008-5]
9) First Principles Study of Rare Earth Mononitrides ScN and YN under Pressure [05009-1-05009-5]
10) Analysis and Evaluation of Climatic Conditions Effect on Amorphous Silicon PV Module [05010-1-05010-5]
11) Coating Deposition by Ion-plasma Sputtering of MAX Phase Ti2AlC Target [05011-1-05011-6]
12) The Influence of Technological Factors on Photoconverters Electrophysical Characteristics [05012-1-05012-5]
13) Synchronization of an Antiferromagnetic Josephson-like Oscillator with an External AC Signal [05013-1-05013-4]
14) Polyethylene Oxide/Barium Titanate Composites: Optical, Electrical and Thermal Properties [05014-1-05014-4]
15) Structural and Optical Characterization of Multiferroic BiFeO3 Nanoparticles Synthesized at Different Annealing Temperatures [05015-1-05015-6]
16) Thermoelectric Properties of InSb Whiskers [05017-1-05017-4]
17) Electronic Properties of Transition-metal Phthalocyanines Obtained within a Hybrid Functional and Bethe-Salpeter Approach [05018-1-05018-5]
18) Fabrication of a New Series of Quaternary Alloys through Hybrid Phase Sintering [05019-1-05019-5]
19) Optimization of n-MOS 6T Nanowire SRAM Bit Cell Based on Nanowires Ratio of SiNWTs [05020-1-05020-4]
20) Design and Development of an Efficient Branch Predictor for an In-order RISC-V Processor [05021-1-05021-4]
21) Simulation Study of Metal-semiconductor Back Contact p-c-Si/Al on Silicon Heterojunction Solar Cells [05022-1-05022-4]
22) Sensitivity of a HIT c-Si Solar Cell to Structural Distortions of the Hydrogenated Amorphous Silicon Constituting the Front Face of the Device [05023-1-05023-5]
23) Waveguide Iris Polarizers for Ku-band Satellite Antenna Feeds [05024-1-05024-5]
24) Nanofilled Antifriction Polymeric Composite Materials for Parts of Friction Units of Sea and River Transport [05025-1-05025-6]
25) Formation of the Ammonium Nitrate Nanoporous Structure in the Vortex Device with Pre-humidification of Granules [05026-1-05026-7]
26) Investigation of Carbon Nanotube FET with Coaxial Geometry [05027-1-05027-5]
27) Ab Initio Calculation of the Interaction of an Edge Dislocation with Transition Metal Impurity Atoms in Silicon [05028-1-05028-4]
28) Direct Synthesis of Graphene from a Recycled Battery Core by Solution Plasma Exfoliation and its Application for Removing Methylene Blue and Rhodamine B from Aqueous Solutions [05029-1-05029-4]
29) Magnetic and Magnetoresistive Properties of Thin Film Alloys Based on Cobalt and Copper [05030-1-05030-6]
30) Properties Evolution of Ion-plasma Coatings on the Base of Transition Metal Nitrides [05031-1-05031-5]
31) Angular Distributions of Scattered Ne and Ar Ions at the Grazing Incidence on the InGaP (001) 110 Surface [05032-1-05032-4]
32) Analytical Calculation of Frequency Spectrum and Group Velocities of Acoustic Phonons in Quasi-two-dimensional Nanostructures [05033-1-05033-5]
33) Gain Enhancement of Microstrip Patch Antenna and Array Antenna Using Different Metamaterial Structures for Telemedicine Applications [05034-1-05034-5]
34) Investigation of Nickel Nanopowders and Their Application as Lubricant Additives [05035-1-05035-3]
