Authors | K.V. Tyschenko , I.M. Pazukha , Т.M. Shabelnyk, I.Yu. Protsenko |
Affiliations | Sumy State University, 2, Rymsky Korsakov Str., 40007 Sumy, Ukraine |
Е-mail | protsenko@aph.sumdu.edu.ua |
Issue | Volume 5, Year 2013, Number 1 |
Dates | Received 08 February 2013; revised manuscript received 19 March 2013; published online 28 March 2013 |
Citation | K.V. Tyschenko, I.M. Pazukha, Т.M. Shabelnyk, I.Yu. Protsenko, J. Nano- Electron. Phys. 5 No 1, 01029 (2013) |
DOI | |
PACS Number(s) | 68.60Dv, 62.60F, 72.10. – d |
Keywords | Thin film Pt, Structure and phase state, Temperature coefficient of resistance, Strain coefficient, Parameters of electron scattering. |
Annotation |
The results of research structural and phase state, termoresistive properties (resistivity, temperature coefficient of resistance (TCR)) in the range of temperature ΔТа = 300-630 К and tensoresistive properties (gauge factor) in the range of deformation Δεl1 = (0-1) %, Δεl2 = (0-2) % were presented. Thin films Pt have fcc structure with lattice parameter ā = 0,390 nm after condensation and annealing. The temperature dependences characterized by relatively large value of resistivity (ρ ~ 10 – 7 Ohm·m) and relatively small value of TCR (β ~ 10 – 4 K – 1) respectively. Strain properties characterized by a wide interval of elastic deformation (more than 1 %). The deformation coefficient of electron mean free path (λ0) ηλ0l ≈ 9 and changing electron mean free path Δλ0 ≈ = 2 nm were calculated. |
List of References English version of article |