Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density
| Authors | Fateh Singh Gill1, Himanshu Gupta2, L.P. Purohit2, Pankaj K. Pal , Kiran Sharma1, Neeraj Dhiman1, R. Kumar2, R.M. Mehra3 |
| Affiliations | 1 Graphic Era University, Clement Town, Dehradun, India 2 Department of Physics, Gurukula Kangri University, 249401 Haridwar, India 3 School of Engineering & Technology, Sharda University, 201306 Greater Noida, India |
| Е-mail | lppurohit@gmail.com |
| Issue | Volume 5, Year 2013, Number 1 |
| Dates | Received 30 December 2012; published online 28 March 2013 |
| Citation | Fateh Singh Gill, Himanshu Gupta, L.P. Purohit, et al., J. Nano- Electron. Phys. 5 No 1, 01019 (2013) |
| DOI | |
| PACS Number(s) | 78.55.Mb, 81.07.Ta, 61.46.Df |
| Keywords | Photoluminescence (17) , Quantum dots (3) , Nanoparticles (70) . |
| Annotation | The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of sphe-rical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model. |
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