Authors | K.O. Butariev, I.F. Koval, Yu.A. Len , M.G. Nakhodkin |
Affiliations | Taras Shevchenko National University of Kyiv, 64, Volodymyrs'ka Str., 01601 Kyiv, Ukraine |
Е-mail | kosbut@gmail.com |
Issue | Volume 5, Year 2013, Number 1 |
Dates | Received 15 November 2012; published online 28 March 2013 |
Citation | K.O. Butariev, I.F. Koval, Yu.A. Len, M.G. Nakhodkin, J. Nano- Electron. Phys. 5 No 1, 01025 (2013) |
DOI | |
PACS Number(s) | 68.55. – a, 71.20.Be, 82.80.Pv, 81.16.Pr |
Keywords | Transition metal (3) , Silicide, Oxidation (4) , Silicon (58) . |
Annotation | In this article the structure Si (001) surface covered by the pre-adsorbed (~ 1-3 nm) of Ti and Cr at room temperature after annealing at 450 °C was studied. It was found that after annealing on silicon surface formed island coverage. The investigation of stoichiometry shows that island’s composed of disilicide structure. |
List of References English version of article |