Design and Implementation of Charge Plasma Based Dopingless MBCFET Using Ultrathin Ge for Low Power Application
| Authors | S. Ashok Kumar, U. Girish, S.V. Gokul, K. Guna Prasath |
| Affiliations |
Department of Electronics and Communication Engineering, Karpagam Academy of Higher Education, Coimbatore, TamilNadu, India |
| Е-mail | 6691ashok@gmail.com |
| Issue | Volume 17, Year 2025, Number 4 |
| Dates | Received 15 May 2025; revised manuscript received 21 August 2025; published online 29 August 2025 |
| Citation | S. Ashok Kumar, U. Girish, S.V. Gokul, K. Guna Prasath, J. Nano- Electron. Phys. 17 No 4, 04035 (2025) |
| DOI | https://doi.org/10.21272/jnep.17(4).04035 |
| PACS Number(s) | 82.33.Xj, 85.40. – e |
| Keywords | Charge Plasma, MBCFET (2) , SRAM (5) , Inverter (2) . |
| Annotation |
This work introduces a novel strategy to enhance electron mobility by leveraging an Ultrathin Pure Si/Ge/Si Substrate within a Charge Plasma-Based Dopingless Multi-Bridge Channel MOSFET. By integrating ultra-thin pure Ge layers with charge plasma-driven multi-bridge channel architecture, the proposed approach maximizes carrier transport efficiency. By using charge plasma concept, the chemical doping difficulties are reduced for sub nano meter devices.The device design involves the direct deposition of ultra-thin Ge crystal layers onto a bulk Si wafer, integrated with multiple bridge channels to improve MOSFET performance. The findings highlight notable improvements, including enhanced electron mobility, minimized hysteresis, and superior I-V characteristics. This integrated methodology ensures precise gate control, optimized carrier dynamics, and overall superior transistor performance, paving the way for next-generation semiconductor advancements. Given that transistors serve as the cornerstone of semiconductor technology, their evolution has significantly contributed to the miniaturization and efficiency of modern electronic systems. A comprehensive analysis of carrier dynamics was conducted using the Lombardi mobility model, complemented by Shockley-Read-Hall (SRH) and Auger recombination mechanisms to account for minority carrier recombination. Inverter and 6T SRAM analysis have been done. The both inverter, read and write comparison results shows the better performance when Ge is incorporated in between silicon material. |
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