Solvothermal Synthesis and Comprehensive Characterization of High-Quality Graphene Oxide

Authors Shib Shankar Biswas1,2, Amit Kumar Kundu3, Hari Shankar Biswas1 , Dilip Kumar Maiti4
Affiliations

1Department of Chemistry, Surendranath College, 700009 Kolkata, India

2Department of Physics, Surendranath College, 700009 Kolkata, India

3Department of Chemistry, Sripat Singh College, Jiaganj, Murshidabad, Pin 742123, India

4Department of Chemistry, University of Calcutta, University College of Science, 700009 Kolkata, India

Е-mail harishankarb7@gmail.com
Issue Volume 17, Year 2025, Number 4
Dates Received 14 April 2025; revised manuscript received 15 August 2025; published online 29 August 2025
Citation Shib Shankar Biswas, Amit Kumar Kundu, Hari Shankar Biswas, et al., J. Nano- Electron. Phys. 17 No 4, 04017 (2025)
DOI https://doi.org/10.21272/jnep.17(4).04017
PACS Number(s) 61.48.Gh, 68.65.Pq, 81.05.ue
Keywords Graphene oxide (2) , Solvothermal synthesis, DMF (2) , Characterization (6) , Graphene-based materials.
Annotation

This study presents the synthesis and characterization of a graphene oxide (GO) thin film prepared using a solvothermal method, optimized for thin-layered GO. Graphene oxide, obtained from graphite flake, is known for its versatility in applications such as electronics, energy storage, and catalysis, due to its layered structure, surface oxygen functionalities, and solubility. In this work, GO was synthesized through a solvothermal approach in N, N-dimethylformamide (DMF), enhancing the exfoliation of graphite oxide into thin GO sheets. The use of DMF facilitated effective layer separation, resulting in a few-layered GO with uniform thickness. The synthesized GO thin film was comprehensively characterized to determine its structural and functional properties. X-ray diffraction (XRD) confirmed the successful formation of GO through the observation of characteristic interlayer spacing. Fourier-transform infrared spectroscopy (FTIR) analysis revealed functional groups, such as hydroxyl and carbonyl groups, indicating GO’s oxidized structure. Raman spectroscopy highlighted the defect density with distinct D and G bands, while scanning electron microscopy (SEM) provided insight into the film's morphology, showing well-dispersed, layered structures. Thermal gravimetric analysis (TGA) exhibited GO’s thermal stability and decomposition profile, affirming the structural robustness of the synthesized thin film. This efficient solvothermal method shows promise for scalable GO thin-film production and assesses the environmental and economic feasibility of this approach to ensure sustainable application.

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