Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications
| Authors | P. Parthasarathi1, T.S. Arun Samuel1 , P. Vimala2, N. Arumugam1 |
| Affiliations |
1Department of ECE, National Engineering College, Kovilpatti, India 2Department of ECE, Dayananda Sagar College of Engineering, Bangalore, India |
| Е-mail | |
| Issue | Volume 14, Year 2022, Number 5 |
| Dates | Received 25 August 2022; revised manuscript received 20 October 2022; published online 28 October 2022 |
| Citation | P. Parthasarathi, T.S. Arun Samuel, P. Vimala, N. Arumugam, J. Nano- Electron. Phys. 14 No 5, 05008 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(5).05008 |
| PACS Number(s) | 85.70. – w, 85.75. – d |
| Keywords | SRAM (4) , FinFET (17) , Power dissipation, BSIM4, Microwind. |
| Annotation |
Embedded SRAM units are required components in today's SoCs. Due to the increased popularity of portable battery-powered devices, low-power IC design has become a focus in recent years. Traditional SRAM cell designs are both power-hungry and underperforming in this new era of speedy mobile computing. This research focuses on the power dissipation of 14 nm FinFET 12T SRAM read and write operations at various temperatures. The power dissipation of the suggested SRAM cell was calculated and compared to that of various existing technologies. A BSIM4 model with a short channel is offered as the proposed 14 nm FinFET 12T SRAM cell. The proposed 12T SRAM power dissipation was 7.430 µw for reading and 12.278 µw for writing operations at 45 C. The recommended SRAM cell had a lower power dissipation. However, the threshold voltage was gradually reduced as the FinFET transistor was scaled down from 65 to 14 nm. For 14 nm FinFET simulations, the DSCH 3.8 and Microwind 3.8 tools were used. |
|
List of References |
Other articles from this number
1) Structural, Morphological and Optical Characterization of Cobalt Diselenide Grown by Direct Vapor Transport (DVT) Method [05001-1-05001-4]2) Microwave Properties of GNP-Polymer Composites with a Segregated Conductive Network [05002-1-05002-5]
3) Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio [05003-1-05003-6]
4) Towards Smart Monitoring Systems: Fault Detection and Diagnosis-Based Artificial Intelligence Algorithms in Solar PV Power Plants [05004-1-05004-5]
5) Microdefects and Electrical Properties of β-Ga2O3 and β-Ga2O3:Mg Crystals Grown by Floating Zone Technique [05005-1-05005-5]
6) Multiharmonic Interactions of Longitudinal Waves in Amplification Section of Superheterodyne Free Electron Laser [05006-1-05006-6]
7) Calculation of the Electron Wave Function and Crystal Potential in a Sphalerite Semiconductor at a Given Temperature [05007-1-05007-5]
8) An Evolutionary Anisotropic Behavior for DC04 Sheet Using Hill48 Function under Non-Associated Flow Rule Hypothesis [05009-1-05009-5]
9) The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells [05010-1-05010-6]
10) Energy Characteristics of Nearly Spherical Metallic Nanoparticles [05011-1-05011-5]
11) Study of Mono- and Polycrystalline Silicon Solar Cells with Various Shapes for Photovoltaic Devices in 3D Format: Experiment and Simulation [05012-1-05012-8]
12) Super-Hydrophobic F-Doped SnO2 (FTO) Nanoflowers Deposited by Spray Pyrolysis Process for Solar Cell Applications [05013-1-05013-6]
13) Technological Features of Real Contact Systems’ Production for Nanosystem Equipment [05014-1-05014-5]
14) Implementation and Analysis of an L-Shaped Tunnel Field Effect Transistor by Incorporating Gate and Oxide Engineering [05015-1-05015-4]
15) Effect of Phase Contrast and Geometrical Parameters on Bending Behavior of Sandwich Beams with FG Isotropic Face Sheets [05016-1-05016-4]
16) Design and Analysis of a Dual-Band 27/38 GHz Elliptical-Shaped Patch Antenna for 5G Applications [05017-1-05017-5]
17) Evaluation of the Iron State in Humid Zones Using GPR with 1.6 GHz Bowtie Antenna [05018-1-05018-6]
18) Prediction of Electrophysical and Magnetic Properties of Multicomponent (High-Entropy) Film Alloys [05019-1-05019-4]
19) Electrical Conduction and Polarization Properties of InSe[CS(NH2)2[С14Н10]] Clathrate [05020-1-05020-6]
20) Influence of the Surface Diffusion Length on the Roughness of Thin Layers Obtained by Random Deposition [05021-1-05021-5]
21) Theoretical Study of the Effect of Packing on the Temperature of Fiber Optic Cables [05022-1-05022-5]
22) A Study of Photoreactivity of Inorganic Nanocrystals with Significant Organic Colors [05023-1-05023-10]
23) Photoconductivity Kinetics in Bilateral Macroporous Silicon [05024-1-05024-5]
24) Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software [05025-1-05025-4]
25) Comparison of Structural and Optical Properties of CdSe Films Grown by CSD and CBD Methods [05026-1-05026-5]
26) Fractal Structure of Nanoporous Carbon Obtained by Hydrothermal Carbonization of Plant Raw Materials [05027-1-05027-4]
27) Probing Co/Si Interface by Raman Spectroscopy [05028-1-05028-4]
28) Heterolayers of Hexagonal α-CdTe [05029-1-05029-5]
29) Theoretical Study of the Spinel Structure of CuCr2O4 in the Tetragonal Phase Using Density Functional Theory [05030-1-05030-7]
