Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software
| Authors | M. Djerioui1, M. Hebali2 , M. Abboun Abid3 |
| Affiliations |
1ENS Ouargla, 300000 Ouargla, Algeria 2Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, 29000 Mascara, Algeria 3ENP Oran, B.P 1523 Oran El M’Naouar, 31000 Oran, Algeria |
| Е-mail | djeriouimoh@gmail.com |
| Issue | Volume 14, Year 2022, Number 5 |
| Dates | Received 20 June 2022; revised manuscript received 24 October 2022; published online 28 October 2022 |
| Citation | M. Djerioui, M. Hebali, M. Abboun Abid, J. Nano- Electron. Phys. 14 No 5, 05025 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(5).05025 |
| PACS Number(s) | 85.30.De |
| Keywords | Symmetrical DG-SOI-MOSFET, Electrical characteristic, Conductance (4) , Miniaturization, (2980) . |
| Annotation |
Double-gate (DG) SOI-MOSFET device is regarded as the next generation of VLSI circuits. In this paper, we show the impact of miniaturization on the demand and challenges of the undoped-body symmetric DG-SOI-MOSFET planar design for low power and high performance. By exploiting the graphical approach used previously, which consists of numerical simulations valid for all bias conditions, from sub-threshold to strong inversion and from linear to saturation operation, we visualized the evolution of the transfer, output and electrical characteristics and output conductance by varying each of the parameters independently: oxide thickness (tox), channel length (L) and channel width (W). The results obtained allowed to verify how each dimension affects different electrical properties of the DG-SOI-MOSFET. It was found that L, W and tox significantly influence these properties, as well as this transistor includes the channel length-modulation (CLM) and drain induced barrier lowering (DIBL) effects. This study showed the ability to predict the electrical behavior of the DG-SOI-MOSFET by its geometrical dimensions, and the possibility of choosing the optimal dimensions to ensure high performance of this transistor in both analog and digital circuits. |
|
List of References |
Other articles from this number
1) Structural, Morphological and Optical Characterization of Cobalt Diselenide Grown by Direct Vapor Transport (DVT) Method [05001-1-05001-4]2) Microwave Properties of GNP-Polymer Composites with a Segregated Conductive Network [05002-1-05002-5]
3) Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio [05003-1-05003-6]
4) Towards Smart Monitoring Systems: Fault Detection and Diagnosis-Based Artificial Intelligence Algorithms in Solar PV Power Plants [05004-1-05004-5]
5) Microdefects and Electrical Properties of β-Ga2O3 and β-Ga2O3:Mg Crystals Grown by Floating Zone Technique [05005-1-05005-5]
6) Multiharmonic Interactions of Longitudinal Waves in Amplification Section of Superheterodyne Free Electron Laser [05006-1-05006-6]
7) Calculation of the Electron Wave Function and Crystal Potential in a Sphalerite Semiconductor at a Given Temperature [05007-1-05007-5]
8) Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications [05008-1-05008-6]
9) An Evolutionary Anisotropic Behavior for DC04 Sheet Using Hill48 Function under Non-Associated Flow Rule Hypothesis [05009-1-05009-5]
10) The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells [05010-1-05010-6]
11) Energy Characteristics of Nearly Spherical Metallic Nanoparticles [05011-1-05011-5]
12) Study of Mono- and Polycrystalline Silicon Solar Cells with Various Shapes for Photovoltaic Devices in 3D Format: Experiment and Simulation [05012-1-05012-8]
13) Super-Hydrophobic F-Doped SnO2 (FTO) Nanoflowers Deposited by Spray Pyrolysis Process for Solar Cell Applications [05013-1-05013-6]
14) Technological Features of Real Contact Systems’ Production for Nanosystem Equipment [05014-1-05014-5]
15) Implementation and Analysis of an L-Shaped Tunnel Field Effect Transistor by Incorporating Gate and Oxide Engineering [05015-1-05015-4]
16) Effect of Phase Contrast and Geometrical Parameters on Bending Behavior of Sandwich Beams with FG Isotropic Face Sheets [05016-1-05016-4]
17) Design and Analysis of a Dual-Band 27/38 GHz Elliptical-Shaped Patch Antenna for 5G Applications [05017-1-05017-5]
18) Evaluation of the Iron State in Humid Zones Using GPR with 1.6 GHz Bowtie Antenna [05018-1-05018-6]
19) Prediction of Electrophysical and Magnetic Properties of Multicomponent (High-Entropy) Film Alloys [05019-1-05019-4]
20) Electrical Conduction and Polarization Properties of InSe[CS(NH2)2[С14Н10]] Clathrate [05020-1-05020-6]
21) Influence of the Surface Diffusion Length on the Roughness of Thin Layers Obtained by Random Deposition [05021-1-05021-5]
22) Theoretical Study of the Effect of Packing on the Temperature of Fiber Optic Cables [05022-1-05022-5]
23) A Study of Photoreactivity of Inorganic Nanocrystals with Significant Organic Colors [05023-1-05023-10]
24) Photoconductivity Kinetics in Bilateral Macroporous Silicon [05024-1-05024-5]
25) Comparison of Structural and Optical Properties of CdSe Films Grown by CSD and CBD Methods [05026-1-05026-5]
26) Fractal Structure of Nanoporous Carbon Obtained by Hydrothermal Carbonization of Plant Raw Materials [05027-1-05027-4]
27) Probing Co/Si Interface by Raman Spectroscopy [05028-1-05028-4]
28) Heterolayers of Hexagonal α-CdTe [05029-1-05029-5]
29) Theoretical Study of the Spinel Structure of CuCr2O4 in the Tetragonal Phase Using Density Functional Theory [05030-1-05030-7]
