Implementation and Analysis of an L-Shaped Tunnel Field Effect Transistor by Incorporating Gate and Oxide Engineering
| Authors | R. Dhanush, S. Ashok Kumar , V. Logisvary |
| Affiliations |
Department of Electronics and Communication Engineering, Sri Manakula Vinayagar Engineering College, Madagadipet, Puducherry, India |
| Е-mail | |
| Issue | Volume 14, Year 2022, Number 5 |
| Dates | Received 27 May 2022; revised manuscript received 20 October 2022; published online 28 October 2022 |
| Citation | R. Dhanush, S. Ashok Kumar, V. Logisvary, J. Nano- Electron. Phys. 14 No 5, 05015 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(5).05015 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Triple material (TM) gate, Band-to-band tunneling (BTBT), L-shaped tunnel FET (TFET), Work function (WF), Electric potential, Corner tunneling, Subthreshold swing (SS). |
| Annotation |
In this paper, an L-shaped tunnel FET (TFET) with the dominant tunneling current along the gate region with gate and oxide engineering is proposed and its electrical characteristics are investigated using TCAD simulations. The band-to-band tunneling (BTBT) takes place near the gate region and the L-shaped structure is to suppress corner tunneling. A triple material (TM) gate structure is formed with three different work functions (WFs) and the drain current performance is simulated and compared with single material (SM) gate L-shaped TFET. The structure is simulated and compared with different dielectric oxides. The subthreshold slope is determined for various voltages, and it gives 40 mV/dec. The analysis is done by the slotboom model for considering impact of doping concentration on energy bandgap narrowing in source/drain regions. The main objective is to minimize the subthreshold swing (SS), reduce leakage current and increase the ON to OFF current ratio by varying the parameters and simulating using Sentaurus Technology Computer Aided Design (TCAD) tool. A new structure is formed with oxide and gate engineering. The existing parameters are varied, and the performance is improved with less subthreshold slope, less leakage current and increase in the ION to IOFF current ratio. |
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