Driving of The Parameters Of GaAs:Si p-n-Structures by Giratronic Irradiation
| Authors | G.A. Sukach1, V.V. Kidalov2 |
| Affiliations | 1 National University of Life and Environmental Sciences of Ukraine, 15, Heroyiv Oborony str., 03041, Kyiv, Ukraine 2 Berdyansk State Pedagogical University, 4, Shmidta Str., 71100, Berdyansk, Ukraine |
| Е-mail | V.V.Kidalov@mail.ru |
| Issue | Volume 3, Year 2011, Number 4 |
| Dates | Received 21 April 2011, in final form 25 September 2011, published online 30 December 2011 |
| Citation | G.A. Sukach, V.V. Kidalov, J. Nano- Electron. Phys. 3 No4, 99 (2011) |
| DOI | |
| PACS Number(s) | 73.20.Hb, 72.80.Ey |
| Keywords | Giratronic irradiation, Light-emitting structure, Impurities, Control the p-n- junction, Thermoelastic stresses. |
| Annotation |
It is shown that by using giratronic irradiation it is possibility to control the p-n junction in an already fabricated light-emitting structure. Shift compensated field emitting structure based on GaAs:Si, due to the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after giratronic irradiation. |
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List of References |
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