Modeling of Threshold Voltage and Drain Current of Uniaxial Strained p-MOSFETs

Authors Amit Chaudhry1, Sonu Sangwan2, Jatindra Nath Roy3

1 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

2 UIET, Panjab University, Sector – 25, 91160014, Chandigarh, India

3 Solar Semiconductor Private Limited, Hyderabad, India

Issue Volume 3, Year 2011, Number 4
Dates Received 11 August 2011, published online 30 December 2011
Citation Amit Chaudhry, Sonu Sangwan, Jatindra Nath Roy, J. Nano- Electron. Phys. 3 No4, 27 (2011)
PACS Number(s) 85.30.De, 85.30.Tv
Keywords Mobility (10) , Strained–Si, Model (52) , Numerical (6) .
An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The results show that the threshold voltage falls and drain current rises due to applied uniaxial strain. The results have also been compared with the experimentally reported results and show good agreement.

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