Effect of the Porous Silicon Layer Structure on Gas Adsorption

Authors A.P. Oksanich , S.E. Pritchin , M.A. Mashchenko, A.Yu. Bobryshev
Affiliations

Kremenchug Mykhailo Ostrogradsky National University, 20, Pervomaiskaya St., 39600 Kremenchug, Ukraine

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Issue Volume 12, Year 2020, Number 4
Dates Received 29 April 2020; revised manuscript received 20 August 2020; published online 25 August 2020
Citation A.P. Oksanich, S.E. Pritchin, M.A. Mashchenko, A.Yu. Bobryshev, J. Nano- Electron. Phys. 12 No 4, 04020 (2020)
DOI https://doi.org/10.21272/jnep.12(4).04020
PACS Number(s) 61.43.Gt, 07.07.Df, 81.05.Rm
Keywords Porous layer, Sensor (27) , Silicon (58) , FTIR spectroscopy.
Annotation

The paper deals with the study of the effect of the morphology and structure of crystallites of p-Si layer on the adsorption of gas sensors. The porous layer was obtained by electrochemical anodization at anodizing current from10 to 60 mA and anodizing time from 5 to 30min. The sensors were created as pSi structures: PdAuSi:GeAuNiAu by electron-beam evaporation. The porous layer surface was studied with optical microscopy, and the crystallite structure was examined with FTIR technique. It has been discovered that the anodization modes have a direct effect on the deformation vibrations of the SiHx group in wavenumbers from 700 to 950 cm – 1. At the boundaries of the crystallites, compressing stresses arise causing a decrease in SiOSi bond in wavenumbers from 1060 to 1160 cm – 1. It has been demonstrated the increasing effect of SiHn stretching bonds and SiOxHy complexes (absorption peaksat 2116 cm – 1 and 2340 cm – 1 respectively). The variation of anodizing time has a stronger effect on the structure of the porous layer than the variation of anodizing current. The adsorption sensitivity of the porous layer has been determined by the relative change in conductivity. The data obtained make it possible to conclude that the anodization mode affects the adsorption of gas sensors. This conclusion correlates with the data obtained with FTIR method in crystallites structure.

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