Authors | S. Rajashabala1, R. Kannan2 |
Affiliations | 1 School of Physics, Madurai Kamaraj University, palkalainagar,Madurai-625021,Tamilnadu,India 2 Department of Physics, Anna University of Technology Madurai, Dindigul Campus, Dindigul-624622, India |
Е-mail | rajashabala@yahoo.com |
Issue | Volume 3, Year 2011, Number 1, Part 5 |
Dates | Received 04 February 2011, published online 08 December 2011 |
Citation | S. Rajashabala, R. Kannan, J. Nano- Electron. Phys. 3 No1, 1041 (2011) |
DOI | |
PACS Number(s) | 73.21.La, 71.55 – i, 73.61.Ey, 71.30. + h. |
Keywords | Hydrogenic donor, Donor binding energy (3) , Metal-insulator transition (3) , Quantum dot and cross- sectional geometry. |
Annotation |
The ionization energies of a hydrogenic donor in a GaAs- Ga1-xAlxAs cubical quantum dot system are obtained for various cross-sectional geometries. We have investigated the metal -insulator transition in such a system by considering the simultaneous effects of pressure and geometry. It is observed that, the ionization energies are increased due the geometry effect. Consecutively, the metal insulator transition couldn’t occur for lower concentration of donor impurities. We present the results for infinite confinement. |
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