Designing Single Chamber Hwcvd System for High Deposition Rate Device Quality A-Si:h Thin Films and Solar Cells
| Authors | N.A. Wadibhasme, S.K. Soni , Alka Kumbhar, Nagsen Meshram, R.O. Dusane |
| Affiliations | Indian Institute of Technology Bombay Powai, 400076, Mumbai, India |
| Е-mail | rodusane@iitb.ac.in |
| Issue | Volume 3, Year 2011, Number 1, Part 5 |
| Dates | Received 04 February 2011, in final form 02 December 2011, published online 08 December 2011 |
| Citation | N.A. Wadibhasme, S.K. Soni, Alka Kumbhar, et al., J. Nano- Electron. Phys. 3 No1, 942 (2011) |
| DOI | |
| PACS Number(s) | 73.50.Pz, 82.80.Gk, 84.60.Jt |
| Keywords | Hydrogenated amorphous silicon (3) , HWCVD (3) , FTIR (30) , Raman spectroscopy (18) , Dark and photoconductivity (2) . |
| Annotation |
A new single chamber HWCVD with vertically mounted substrates and filaments has been designed for depositing device quality a-Si:H films with high deposition rate. Optimization studies on films deposited in this chamber under a variety of deposition conditions yielded uniform films at more than 7Å/sec deposition rate and with very low oxygen content. These films show a photoconductivity gain of more than 105. The working pressure has been kept quite low at 15 mtorr compared to earlier studies. i-layers of a p-i-n single junction solar cells were deposited on the TCO (Asahi-U type) glass in this reactor. The initial p-layer and the final n-layer were deposited in another system with separate chambers for these doped layers thus exposing the p-layer as well as the i-layer to the atmosphere during the transfer. Using this optimized intrinsic layer, a-Si:H based p-i-n solar cell showed a conversion efficiency of 4.7 %. |
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List of References |
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