Effect of RF-magnetron Sputtering Parameters on the Structure of Hafnium Diboride Films

Authors A.A. Goncharov , 1 , A.N. Yunda1, V.V. Buranich1, I.V. Shelest1, V.B. Loboda2

1Sumy State University, 2, Rimskyi Korsakov Str., 40007 Sumy, Ukraine

2Sumy National Agrarian University, 160, Herasym Kondratiev Str., 40021 Sumy, Ukraine

Е-mail o.goncharov@mss.sumdu.edu.ua
Issue Volume 10, Year 2018, Number 3
Dates Received 19 March 2018; published online 25 June 2018
Citation A.A. Goncharov, A.N. Yunda, V.V. Buranich, et al., J. Nano- Electron. Phys. 10 No 3, 03002 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03002
PACS Number(s) 68.35. – p, 68.55.A –, 68.60.Bs, 81.07.Bc, 81.15.Cd
Keywords Magnetron discharge, Hafnium diboride, Bias potential (2) , Structure (104) , Ion current.

The study reports about effect of energy factor on the structure formation of nanocrystalline hafnium diboride films. It was shown, that in the magnetron sputtering the change of energy density Ebi delivered to growing film by bombarding ions occurring due to changing in substrate bias potential Us and ion current density js, leads to the formation of hafnium diboride films with various structural states from nanoclustered to nanocrystalline with a growth texture in plane (0.01) and nanocrystallites size from 2.3 to 20 nm respectively.

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