Electronic Conduction in Annealed Sulfur-Doped a-Si:H Films

Authors Himanshu Gupta1, Fateh Singh Gill2, S.K. Sharma3, R. Kumar4, R.M. Mehra5

1Department of Physics, Gurukula Kangri University, Haridwar-249401, India

2Graphic Era University, Clement Town, Dehradun, India

3Semiconductor Device Laboratory, Department of Semiconductor Science, Dongguk University-Seoul, Jung-gu, Seoul 100-715, Korea

4Garg Degree College, Luksar Road Haridwar, Uttrakhand, India

5School of Engineering & Technology, Sharda University, Greater Noida -201306, India

Issue Volume 10, Year 2018, Number 3
Dates Received 26 March 2018; revised manuscript received 06 June 2018; published online 25 June 2018
Citation Himanshu Gupta, Fateh Singh Gill, et al., J. Nano- Electron. Phys. 10 No 3, 03014 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03014
PACS Number(s) 71.55.Ak , 71.55.Jv, 73.61.Jc
Keywords a-Si:H (2) , Dark and Photoconductivity (2) , Annealing effect, S doped a-Si:H.

In present work, the effect of annealing on dark and photo conductivity as well as the various causes of conduction mechanics in S doped amorphous hydrogenated silicon films (a-Si:H) is discussed. The variation of the dark conductivity as a function of temperature has been carried out on unannealed and annealed (annealed at an optimized temperature of 300 °C) thin film samples and the activation energy of dark conductivity of respective samples was also calculated at different temperatures. The Study concludes that at high temperatures, an activated type mechanism is responsible for conduction in the a-Si:H films.

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