Effect of the Doping Level on the Gas Sensitivity of Si p-n Junctions
| Authors | O.O. Ptashchenko1, F.O. Ptashchenko2, V.R. Gilmutdinova1, O.S. Kyrnychuk1 |
| Affiliations |
1I. I. Mechnikov National University of Odessa, 2, Dvoryanska St., 65026 Odesa, Ukraine 2National University "Odesa Maritime Academy", 8, Didrikhsona St., 65029 Odesa, Ukraine |
| Е-mail | aptash@onu.edu.ua |
| Issue | Volume 10, Year 2018, Number 3 |
| Dates | Received 26 December 2017; revised manuscript received 06 June 2018; published online 25 June 2018 |
| Citation | O.O. Ptashchenko, F.O. Ptashchenko, V.R. Gilmutdinova, O.S. Kyrnychuk, J. Nano- Electron. Phys. 10 No 3, 03022 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(3).03022 |
| PACS Number(s) | 07.07.Df, 68.47.Fg |
| Keywords | Silicon (58) , p-n junction (2) , Gas sensor (5) , Ammonia (2) , Sensitivity threshold, Doping level. |
| Annotation |
The characteristics of Si diffused p-n junctions as water and ammonia vapors sensors are studied over a wide range of the impurity concentration gradient a. It is established that a lowering of the value a from 6·1023 сm – 4 to 5·1019 сm – 4 decreases the sensitivity threshold Pm of the p-n structures to NH3 vapors (i.e. the lowest vapors partial pressure, which can be detected) by two orders, to about 0.5 Pa. This value is much lower than those of silicon meso-porous membranes and silicon nano-wires fabricated from plates with a boron concentration of 1018 сm – 3. The observed sensitivity threshold variation among the studied samples is due to the influence of uncontrolled surface centers. A treatment of the sample sequentially in HF and water drastically increases the sensitivity threshold, and the exposure in a Na2S solution significantly lowers it. |
|
List of References English version of article |
Other articles from this number
1) High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method [03001-1-03001-6]2) Effect of RF-magnetron Sputtering Parameters on the Structure of Hafnium Diboride Films [03002-1-03002-5]
3) Structure, Strength and Conductive Properties of Vacuum Cu-Ta Condensates CuTa [03003-1-03003-4]
4) Numerical Simulation of SnS-Based Solar Cells [03004-1-03004-6]
5) Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications [03005-1-03005-6]
6) Optical Analytical Studies of Electrostatic-Sprayed Eu-doped Cadmium Selenide Nanofilms at Different Temperatures [03006-1-03006-5]
7) Physical and Technological Foundations of the «Chloride» Treatment of Cadmium Telluride Layers for Thin-film Photoelectric Converters [03007-1-03007-7]
8) Molecular Dynamics Simulations of the Formation Processes and Luminescence Properties of Zn-ZnO Core-Shell Nanostructures [03008-1-03008-5]
9) Structural Engineering of the Growth of Crystallites with a Predominant Orientation in Bilayer Multi-Period Vacuum Arc Nitride Coatings [03009-1-03009-5]
10) Synthesis of Copper Nanoparticles by Cathode Sputtering in Radio-frequency Plasma [03010-1-03010-4]
11) Nanosize Structures and Energy Parameters of Doped Silicon Clusters Passivated by Hydrogen [03011-1-03011-6]
12) Modelling the Initial Stages of Condensation of As-S Atomic Clusters [03012-1-03012-9]
13) Mössbauer Study of Nickel-Substituted Cobalt Ferrites [03013-1-03013-5]
14) Electronic Conduction in Annealed Sulfur-Doped a-Si:H Films [03014-1-03014-4]
15) Phase and Chemical Composition of Diffusion Titanium-Aluminum-Chromium Coatings Based on ХН55ВМТКЮ Alloy [03015-1-03015-4]
16) The Effects of the Giant and Anisotropic Magnetoresistance: Demonstration and Learning in the Physics Course of High Schools [03016-1-03016-8]
17) Synthesis and Growth of Au Nanostructures on MoS2 Interface [03017-1-03017-6]
18) Computer Simulation of Electrical Characteristics of a Graphene Cluster with Stone-Wales Defects [03018-1-03018-7]
19) Long-range Interaction between pb-centers andNO2 Molecules Adsorbed on the Silicon Surface [03019-1-03019-7]
20) Thermodynamical Investigation of Liquid Alkali Metals with Gibbs–Bogoliubov Method [03020-1-03020-4]
21) Transmitting Coefficient and Quasi-Stationary States of Electron in Symmetric Double-Barrier Nanostructure with Position-Dependent Potential and Effective Mass [03021-1-03021-5]
22) The Role of the Charge State of the Molecule and the External Electric Field in the Functioning of Molecular Switches Based on Spiropyran Molecule [03023-1-03023-5]
23) Structural-Phase State and Electrical Conductivity of Film Structures Based on FCC Phase of Fe-Co and Cu Alloy [03024-1-03034-6]
24) Formation of Graded-Gap Active Region of the Photoelectric Converter Based on Algaas Solid Solutions by Trimethylaluminium Flow Modulation in the MOC Vapour Deposition Method [03025-1-03025-5]
25) Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms [03026-1-03026-6]
26) Nanostructured ZnO Arrays Fabricated via Pulsed Electrodeposition and Coated with Ag Nanoparticles for Ultraviolet Photosensors [03027-1-03027-8]
27) Investigation of the Effect of the Composition of Residual Gases on the Hardness, Adhesion Properties and the Composition of SiC-AlN Coatings Deposited by the Magnetron Sputtering [03028-1-03028-5]
28) Ultrafine β-FeOOH: the Influence of Synthesis Conditions on the Morphological, Magnetic and Electrochemical Properties [03029-1-03029-6]
29) Multistage Finish Drying of the N4HNO3 Porous Granules as a Factor for Nanoporous Structure Quality Improvement [03030-1-03030-5]
30) Influence of Ferroelastic Phase Transitions on the Spatial Distribution of Point Defects in Real Solids [03031-1-03031-5]
31) Effect of Heat Treatments on the Mechanical Properties of a Form Tool [03032-1-03032-3]
32) Calculation of the Quasiparticle Energies of Electrons and the Exciton Spectrum in the Region of the Fundamental Absorption Edge in a Perovskite Crystal KMgF3 [03033-1-03033-3]
