Computer Simulation of Electrical Characteristics of a Graphene Cluster with Stone-Wales Defects
| Authors | D.M. Sergeyev1,2 |
| Affiliations |
1Zhubanov Aktobe Regional University, 34, Moldagulova Ave., 030000 Aktobe, Kazakhstan 2Begeldinov Military Institute of Air Defence Forces, 39, Moldagulova Ave., 030012 Aktobe, Kazakhstan |
| Е-mail | serdau@rambler.ru |
| Issue | Volume 10, Year 2018, Number 3 |
| Dates | Received 22 February 2018; revised manuscript received – 05 June 2018; published online 25 June 2018 |
| Citation | D.M. Sergeyev, J. Nano- Electron. Phys. 10 No 3, 03018 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(3).03018 |
| PACS Number(s) | 73.63. – b, 61.72.J – |
| Keywords | Graphene (23) , Stone-Wales defect (3) , Density of states (6) , Current-voltage characteristic (12) , Differential conductivity (3) , Transmission spectra (4) . |
| Annotation |
In the framework of the density functional theory, using the method of nonequilibrium Green's functions and in the local density approximation, the electrical characteristics of various configurations of graphene with a Stone-Wales defect are investigated. The calculation is implemented in the Atomistix ToolKit with Virtual NanoLab program. The current-voltage, dI/dV-characteristics, the transmission spectrum and the density of states of the nanostructures under consideration are calculated. At an energy of 0.5 eV, a band consisting of two peaks, characteristic for Stone-Wales defects, appears on the density of states. This "defect band" can be useful for recognizing such defects, as well as for determining their concentration in a graphene film. It is shown that on the current-voltage characteristics of defective graphene structures, a region with a negative differential resistance appears, possibly due to resonant tunneling of quasiparticles. The same changes are also observed on the dI/dV-characteristic. The obtained results can be useful for calculations of new promising electronic devices of nanoelectronics based on graphene. |
|
List of References English version of article |
Other articles from this number
1) High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method [03001-1-03001-6]2) Effect of RF-magnetron Sputtering Parameters on the Structure of Hafnium Diboride Films [03002-1-03002-5]
3) Structure, Strength and Conductive Properties of Vacuum Cu-Ta Condensates CuTa [03003-1-03003-4]
4) Numerical Simulation of SnS-Based Solar Cells [03004-1-03004-6]
5) Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications [03005-1-03005-6]
6) Optical Analytical Studies of Electrostatic-Sprayed Eu-doped Cadmium Selenide Nanofilms at Different Temperatures [03006-1-03006-5]
7) Physical and Technological Foundations of the «Chloride» Treatment of Cadmium Telluride Layers for Thin-film Photoelectric Converters [03007-1-03007-7]
8) Molecular Dynamics Simulations of the Formation Processes and Luminescence Properties of Zn-ZnO Core-Shell Nanostructures [03008-1-03008-5]
9) Structural Engineering of the Growth of Crystallites with a Predominant Orientation in Bilayer Multi-Period Vacuum Arc Nitride Coatings [03009-1-03009-5]
10) Synthesis of Copper Nanoparticles by Cathode Sputtering in Radio-frequency Plasma [03010-1-03010-4]
11) Nanosize Structures and Energy Parameters of Doped Silicon Clusters Passivated by Hydrogen [03011-1-03011-6]
12) Modelling the Initial Stages of Condensation of As-S Atomic Clusters [03012-1-03012-9]
13) Mössbauer Study of Nickel-Substituted Cobalt Ferrites [03013-1-03013-5]
14) Electronic Conduction in Annealed Sulfur-Doped a-Si:H Films [03014-1-03014-4]
15) Phase and Chemical Composition of Diffusion Titanium-Aluminum-Chromium Coatings Based on ХН55ВМТКЮ Alloy [03015-1-03015-4]
16) The Effects of the Giant and Anisotropic Magnetoresistance: Demonstration and Learning in the Physics Course of High Schools [03016-1-03016-8]
17) Synthesis and Growth of Au Nanostructures on MoS2 Interface [03017-1-03017-6]
18) Long-range Interaction between pb-centers andNO2 Molecules Adsorbed on the Silicon Surface [03019-1-03019-7]
19) Thermodynamical Investigation of Liquid Alkali Metals with Gibbs–Bogoliubov Method [03020-1-03020-4]
20) Transmitting Coefficient and Quasi-Stationary States of Electron in Symmetric Double-Barrier Nanostructure with Position-Dependent Potential and Effective Mass [03021-1-03021-5]
21) Effect of the Doping Level on the Gas Sensitivity of Si p-n Junctions [03022-1-03022-6]
22) The Role of the Charge State of the Molecule and the External Electric Field in the Functioning of Molecular Switches Based on Spiropyran Molecule [03023-1-03023-5]
23) Structural-Phase State and Electrical Conductivity of Film Structures Based on FCC Phase of Fe-Co and Cu Alloy [03024-1-03034-6]
24) Formation of Graded-Gap Active Region of the Photoelectric Converter Based on Algaas Solid Solutions by Trimethylaluminium Flow Modulation in the MOC Vapour Deposition Method [03025-1-03025-5]
25) Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms [03026-1-03026-6]
26) Nanostructured ZnO Arrays Fabricated via Pulsed Electrodeposition and Coated with Ag Nanoparticles for Ultraviolet Photosensors [03027-1-03027-8]
27) Investigation of the Effect of the Composition of Residual Gases on the Hardness, Adhesion Properties and the Composition of SiC-AlN Coatings Deposited by the Magnetron Sputtering [03028-1-03028-5]
28) Ultrafine β-FeOOH: the Influence of Synthesis Conditions on the Morphological, Magnetic and Electrochemical Properties [03029-1-03029-6]
29) Multistage Finish Drying of the N4HNO3 Porous Granules as a Factor for Nanoporous Structure Quality Improvement [03030-1-03030-5]
30) Influence of Ferroelastic Phase Transitions on the Spatial Distribution of Point Defects in Real Solids [03031-1-03031-5]
31) Effect of Heat Treatments on the Mechanical Properties of a Form Tool [03032-1-03032-3]
32) Calculation of the Quasiparticle Energies of Electrons and the Exciton Spectrum in the Region of the Fundamental Absorption Edge in a Perovskite Crystal KMgF3 [03033-1-03033-3]
