Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D
| Authors | Benmoussa Dennai, H. Ben Slimane, A. Helmaoui |
| Affiliations | The laboratory of Physics in semiconductor devices, University of Bechar, Algeria |
| Е-mail | dennai_benmoussa@yahoo.com |
| Issue | Volume 6, Year 2014, Number 4 |
| Dates | Received 14 May 2014; published online 29 November 2014 |
| Citation | Benmoussa Dennai, H. Ben Slimane, A. Helmaoui, J. Nano- Electron. Phys. 6 No 4, 04001 (2014) |
| DOI | |
| PACS Number(s) | 88.40.jp |
| Keywords | AMPS-1D (10) , Multi-junction, GaAs (22) , Tunnel junction (2) . |
| Annotation | The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE). |
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