GaN Low-dimensional Structures
| Authors | А.F. Dyadenchuk , V.V. Kidalov |
| Affiliations | Berdyansk State Pedagogical University, 4, Shmydta, 71100 Berdyansk, Ukraine |
| Е-mail | |
| Issue | Volume 6, Year 2014, Number 4 |
| Dates | Received 13 May 2014; published online 29 November 2014 |
| Citation | А.F. Dyadenchuk, V.V. Kidalov, J. Nano- Electron. Phys. 6 No 4, 04043 (2014) |
| DOI | |
| PACS Number(s) | 61.43Gt, 78.30Fs, 78.55m |
| Keywords | Nitridation method, Quantum dots (3) . |
| Annotation | The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen environment. Nitrogen atoms, which were deposited on the GaAs surface, replace arsenic ones that lead to the formation of a thin GaN layer on the GaAs surface. The photoluminescence and surface morphology of the structures obtained were studied by scanning electron spectroscopy. |
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List of References |
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