Improvement of Front Side Contact by Light Induced Plating of c-Si Solar Cell

Authors	S. Maity¹, S. Dey¹, C.T. Bhunia¹, H. Saha²
Affiliations	¹ Electronics and Communication Engineering, National Institute of Technology, 791112 Arunachal Pradesh, India ² Center of Excellence for Green Technology and Sensor Systems, IIEST, 711103 India
Е-mail	santanumaity_4u@rediffmail.com
Issue	Volume 6, Year 2014, Number 4
Dates	Received 08 July 2014; revised manuscript received 27 November 2014; published online 29 November 2014
Citation	S. Maity, S. Dey, C.T. Bhunia, H. Saha, J. Nano- Electron. Phys. 6 No 4, 04005 (2014)
DOI
PACS Number(s)	88.40.jp
Keywords	Solar cell (51) , Silver nano particles, LIP (7) , Air-voids, Plasmonic (2) , Series resistance.
Annotation	Screen printing technique using silver paste is one of the established industrial processes for manufacturing solar cell. But due to some limitation of this process conductivity of contact decreases. Light Induced Plating (LIP) of c-Si solar cell is a critical process generally leading to decrease in series resistance of front side contact, increase in fill factor and efficiency associated with marginal reduction in short circuit current (Jsc). In this paper experimental results showing the decrease in series resistance but increase in short circuit current (Jsc) by using LIP process is reported. The LIP experiments are carried out using two different methods i.e. with and without bias. Even the unintentional deposition of silver nano particles on the front surface of the solar cell during LIP process is clearly shown.
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