| Title |
A Strategic Review of Reduction of Dislocation Density at the Heterogenious Junction of GAN Epilayer on Foreign Substrate |
| Authors |
S.Das Bhattacharyya, P. Mukhopadhyay, P. Das, D. Biswas |
| Issue |
Volume 3, Year 2011, Number 1, Part 1 |
| Pages |
0067 - 0084 |
| Title |
High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor |
| Authors |
N.P. Maity, A. Pandey, S. Chakraborty, M. Roy |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0947 - 0955 |
| Title |
Diode Based on Amorphous SiC |
| Authors |
V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, E.A. Piljuk, I. Goncharov, S.V. Taran |
| Issue |
Volume 5, Year 2013, Number 4 |
| Pages |
04029-1 - 04029-3 |
| Title |
Features of Structure of Magnetron Films Si3N4 and SiC |
| Authors |
A.P. Kuzmenko, A.S. Chekadanov, S.V. Zakhvalinsky, E.A. Pilyuk, M.B. Dobromyslov |
| Issue |
Volume 5, Year 2013, Number 4 |
| Pages |
04025-1 - 04025-3 |
| Title |
RF Magnetron Sputtering of Silicon Carbide and Silicon Nitride Films for Solar Cells |
| Authors |
V.S. Zakhvalinskii, E.A. Piljuk, I.Yu. Goncharov, V.G. Rodriges, A.P. Kuzmenko, S.V. Taran, P.A. Abakumov |
| Issue |
Volume 6, Year 2014, Number 3 |
| Pages |
03062-1 - 03062-3 |
| Title |
Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x |
| Authors |
V.I. Altukhov, B.A. Bilalov, A.V. Sankin, S.V. Filipova |
| Issue |
Volume 8, Year 2016, Number 4 |
| Pages |
04003-1 - 04003-4 |
| Title |
Analog Behavioral Modeling of Schottky Diode Using Spice |
| Authors |
Messaadi Lotfi, Dibi Zohir |
| Issue |
Volume 9, Year 2017, Number 1 |
| Pages |
01002-1 - 01002-4 |
