Title |
Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET |
Authors |
Mahesh Chandra, Alka Panwar, B.P. Tyag |
Issue |
Volume 3, Year 2011, Number 1, Part 3 |
Pages |
0474 - 0478 |
Title |
Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison |
Authors |
Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar |
Issue |
Volume 3, Year 2011, Number 1, Part 3 |
Pages |
0569 - 0575 |
Title |
Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's |
Authors |
Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit |
Issue |
Volume 3, Year 2011, Number 1, Part 3 |
Pages |
0576 - 0583 |
Title |
A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function |
Authors |
Anoop Garg, S.N. Sinha, R.P. Agarwal |
Issue |
Volume 3, Year 2011, Number 1, Part 5 |
Pages |
0894 - 0902 |
Title |
Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT |
Authors |
Palash Das, Dhrubes Biswas |
Issue |
Volume 7, Year 2015, Number 1 |
Pages |
01006-1 - 01006-3 |
Title |
Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
Authors |
Tawseef A. Bhat, M. Mustafa, M.R. Beigh |
Issue |
Volume 7, Year 2015, Number 3 |
Pages |
03010-1 - 03010-5 |
Title |
Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad |
Authors |
Neha Goel, Manoj Kumar Pandey |
Issue |
Volume 8, Year 2016, Number 1 |
Pages |
01041-1 - 01041-4 |
Title |
An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors |
Authors |
N. Bora, P. Das, R. Subadar |
Issue |
Volume 8, Year 2016, Number 2 |
Pages |
02003-1 - 02003-4 |
Title |
Design Device for Subthreshold Slope in DG Fully Depleted SOI MOSFET |
Authors |
Neha Goel, Manoj Kumar Pandey |
Issue |
Volume 9, Year 2017, Number 1 |
Pages |
01022-1 - 01022-4 |
Title |
Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor |
Authors |
Manjula Vijh, R.S. Gupta, Sujata Pandey |
Issue |
Volume 9, Year 2017, Number 1 |
Pages |
01030-1 - 01030-4 |
Title |
Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs |
Authors |
Nitin Sachdeva, Munish Vashishath, P.K. Bansal |
Issue |
Volume 9, Year 2017, Number 6 |
Pages |
06009-1 - 06009-4 |