Authors | D. Sergeyev1,2 , N. Zhanturina2 , A.L. Solovjov3 |
Affiliations |
1T. Begeldinov Aktobe Avation Institute, 030012 Aktobe, Kazakhstan 2K. Zhubanov Aktobe Regional University, 030000 Aktobe, Kazakhstan 3B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 61103 Kharkiv, Ukraine |
Е-mail | serdau@mail.kz |
Issue | Volume 17, Year 2025, Number 4 |
Dates | Received 03 April 2025; revised manuscript received 18 August 2025; published online 29 August 2025 |
Citation | D. Sergeyev, N. Zhanturina, A.L. Solovjov, J. Nano- Electron. Phys. 17 No 4, 04001 (2025) |
DOI | https://doi.org/10.21272/jnep.17(4).04001 |
PACS Number(s) | 07.05.Tp, 73.40. – c, 31.15. – p |
Keywords | Computer modeling, p-n junction (2) , Electromagnetic pulse, Thermal effect, Molecular dynamics. |
Annotation |
This paper presents the results of a modeling study of the breakdown of the GaAs-based electron-hole junction using density functional theory and molecular dynamics method. Electrical characteristics were simulated using Slater-Koster and non-equilibrium Green's function methods. It is shown that the presence of initial vacancy defects and Frenkel pairs in the volume of the semiconductor crystal contributes to the relaxation of mechanical stresses created by thermal deformation. It is determined that the electromagnetic component of the pulse leads to the appearance of bends in the semiconductor structure, accompanied by significant deviations of the parameters of the crystal lattice from the norm. When considering the simultaneous action of thermal and electromagnetic components of the pulse, these bends are smoothed out, presumably due to the relaxation of mechanical stresses through initial and thermal vacancy defects. It is revealed that vulnerable areas of the semiconductor device are the junction points of the crystalline structure with the contacts, as well as the boundary between p- and n-semiconductors. Analysis of electrical characteristics shows that even before the breakdown, the semiconductor diode loses its rectifying properties, and the pre-breakdown state of the diode is accompanied by a significant impulsive in-crease in reverse current, further leading to overheating and thermal breakdown. |
List of References |