| Автори | A.S. Opanasyuk1 , D.I. Kurbatov1 , M.M. Ivashchenko1 , I.Yu. Protsenko1 , H. Cheong2 |
| Афіліація | 1 Sumy State University, 2, Rimsky-Korsakov Str., 40007 Sumy, Ukraine 2 Sogang University, 1, Shinsu-dong, Mapo-gu, 121-742, Seoul, Korea |
| Е-mail | kurd@ukr.net |
| Випуск | Том 4, Рік 2012, Номер 1 |
| Дати | Received 28 December 2011; revised manuscript received 20 February 2012; published online 14 March 2012 |
| Цитування | A.S. Opanasyuk, D.I. Kurbatov, M.M. Ivashchenko, et al. J. Nano-Electron. Phys. 4 No 1, 01024 (2012) |
| DOI | |
| PACS Number(s) | 8.20. – e, 78.20.Ci |
| Ключові слова | Thin films (60) , Solar cells (17) , Properties (87) , ZnS (30) , ZnSe (13) , CZTS (14) , CZTSe (2) . |
| Анотація | The paper presents complex investigation of optical characteristics and some structural parameters of ZnS and ZnSe films obtained by the close-spaced sublimation technique under different growth condition. Investigation of optical characteristics was carried out in the 350-900 nm wavelength range for ZnS and 300-600 nm for ZnSe. Spectral distributions of transmission Т() and reflection spectra R() and their dependence on the deposition temperature of ZnS and ZnSe films are obtained from optical studies. |
|
Перелік посилань |