Variation of Quantum Well Infrared Photodetectors Parameter With an Applied Electric Field
| Автори | R.P. Singh, D.P. Singh |
| Афіліація | Department of Physics, Banaras Hindu University, Varanasi-221005, India |
| Е-mail | ravindra142@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
| Дати | Received 04 February 2011, published online 08 December 2011 |
| Цитування | R.P. Singh, D.P. Singh, J. Nano- Electron. Phys. 3 No1, 992 (2011) |
| DOI | |
| PACS Number(s) | 42.79.Pw |
| Ключові слова | Quantum well infrared photodetectors, Intersubband electron transitions, Dark current, Responsivity. |
| Анотація |
A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing intersubband electron transitions and tunneling injection electrons. The dark current and the responsivity are derived as functions of the QWIP parameters, including the number of the QWs and electric field dependent capture probability in an analytical form. |
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Перелік посилань |
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