Absorption and Luminescence of Hydrogen and Oxygen Passivated Silicon Quantum Dots
| Автори | C. Rajesh1, S. Mahamuni1, S.V. Ghaisas2 |
| Приналежність | 1 Department of Physics, University of Pune, Ganeshkhind, 411007, Pune, India 2 Department of Electronic Science, University of Pune, Ganeshkhind, 411007, Pune, India |
| Е-mail | svg@electronics.unipune.ac.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
| Дати | Received 04 February 2011, published online 08 December 2011 |
| Посилання | C. Rajesh, S. Mahamuni, S.V. Ghaisas, J. Nano- Electron. Phys. 3 No1, 903 (2011) |
| DOI | |
| PACS Number(s) | 78.67.Hc, 78.55.Ap, 78.67. – n, 78.55. – m |
| Ключові слова | IV Semiconductor, Photoluminescence (17) , UV-Vis absorption (2) , Nanoparticles (70) , Photovoltaics (4) . |
| Анотація |
Silicon (Si) quantum dots (QDs) passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %. |
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Перелік посилань |
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