Surface States and Photoluminescence From Porous Silicon
| Автори | Md. Nazrul Islam1, Satyendra Kumar2 |
| Афіліація | 1 System Reliability Area, Space Applications Centre (ISRO), Jodhpur Tekra, Ambawadi Vistar P.O., Amhedabad – 380058, India
2 Department of Physics, Indian Institute of Technology, Kanpur Kanpur – 208016, India |
| Е-mail | nazrul@sac.isro.gov.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
| Дати | Received 04 February 2011, published online 08 December 2011 |
| Цитування | Md. Nazrul Islam, Satyendra Kumar, J. Nano- Electron. Phys. 3 No1, 910 (2011) |
| DOI | |
| PACS Number(s) | 78.55.Mb, 78.67.Bf |
| Ключові слова | Porous silicon (3) , Photoluminescence (17) , Quantum confinement (5) , Surface states, Raman scattering (4) . |
| Анотація |
Photoluminescence (PL) spectra of freshly electrochemically etched porous silicon layers anodized under various condition have been measured and analyzed according to quantum confinement (QC) model and surface state models. The results support the combination of QC and surface state models for visible PL from fresh PS layers. |
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Перелік посилань |
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