Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications
| Автори | N. Harihara Krishnan1, N. Anandarao1, Vikram Kumar Yadav1, K.N. Jayaraman1, Ganesh Sanjeev2 |
| Приналежність | 1 Semiconductors and Photovoltaics Department, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India 2 Microtron Center, Department of Studies in Physics, Mangalore University, Mangalore |
| Е-mail | hariharakn@bheledn.co.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
| Дати | Received 04 February 2011, published online 08 December 2011 |
| Посилання | N. Harihara Krishnan, N. Anandarao, Vikram Kumar Yadav, et al., J. Nano- Electron. Phys. 3 No1, 914 (2011) |
| DOI | |
| PACS Number(s) | 85.30. – z, 66.30.Lw |
| Ключові слова | Semiconductor devices, Fast recovery diodes, Electron irradiation (2) , Gold diffusion, Reverse recovery characteristics (2) . |
| Анотація |
This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings. |
|
Перелік посилань |
Інші статті цього номера
1) Effect of Change in Ba Concentration on Crystallintiy and Dielectric Constant of the Sol-Gel Deposited Barium Strontium Titante (BST) Films on n-Type Si Wafer [0851-0858]2) Room Temperature Ammonia Gas Sensing Characteristics of Co3O4 [0859-0867]
3) A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions [0868-0877]
4) Germanium nanocrystals embedded in silicon dioxide for floGermanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices ating gate memory devices [0878-0883]
5) Thermodynamic Properties of ZnO With in Mie-Grüneisen Hypothesis [0884-0887]
6) Numerical Simulation of Blinking Quantum dot Based on Temperature Dependence 3-Dimensional Levy Random Walk [0888-0893]
7) A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function [0894-0902]
8) Absorption and Luminescence of Hydrogen and Oxygen Passivated Silicon Quantum Dots [0903-0909]
9) Surface States and Photoluminescence From Porous Silicon [0910-0913]
10) Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [0921-0925]
11) Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [0926-0936]
12) Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [0937-0941]
13) Designing Single Chamber Hwcvd System for High Deposition Rate Device Quality A-Si:h Thin Films and Solar Cells [0942-0946]
14) High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [0947-0955]
15) Antimony Doped Tin Oxide Thin Films: Co Gas Sensor [0956-0962]
16) A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s [0963-0971]
17) Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT [0972-0978]
18) Analytical Estimate of Open-Circuit Voltage of a Schottky-Barrier Solar Cell Under High Level Injection [0979-0991]
19) Variation of Quantum Well Infrared Photodetectors Parameter With an Applied Electric Field [0992-0994]
20) Barrier Inhomogeneities of Al/p-In2Te3 Thin Film Schottky Diodes [0995-1004]
21) Effect of Laser on the Bound Magnetic Polaron in a Semimagnetic Quantum Wire [1005-1009]
22) Propagation Characteristics of Surface Plasmon Waves on Au, Ag and Al at Optical Wavelengths [1010-1020]
23) Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules [1021-1034]
24) Vacancy Defect Reconstruction and its Effect on Electron Transport in Si-C Nanotubes [1035-1040]
25) Simultaneous Effects of Hydrostatic Pressure and Geometry on Metal-Insulator Transition in a Cubical Quantum Dot [1041-1047]
26) Electrical Transport Characteristics of Pd/V/N-InP Schottky Diode From I-V-T and C-V-T Measurements [1048-1055]
27) Fabrication of Polyaniline/TiO~2 Nanocomposite Ammonia Vapor Sensor [1056-1063]
28) Structural, Optical, and Magnetic Properties of Zn1-xMnxs (x = 0.00, 0.01, and 0.03) Nanoparticles [1064-1070]
29) Modeling of Electron Mobility of GaN at Low Temperature and Low Electric Field [1071-1080]
30) Investigation of Implantation-Induced Damage in Indium Phosphide for Layer Transfer Applications [1081-1085]
31) Impact of Annealing on CuInSe~2 Thin Films and Its Schottky Interface [1086-1095]
32) Comparative Study of Polymer and Semiconductor for Fractional Quantum Hall Effect [1096-1101]
33) New Evolving Directions for Device Performance Optimization Based Integration of Compound Semiconductor Devices on Silicon [1102-1111]
34) Effect of Drift Region Doping and Coulmn Thickness Variations in a Super Junction Power MOSFET: a 2-D Simulation Study [1112-1119]
35) Effective Passivation of C-Si by Intrinsic A-Si:h Layer for hit Solar Cells [1120-1126]
36) Simulation and Optimization of n-Type PERL Silicon Solar Cell Structure [1127-1136]
