Structure, Optical and Electrical Characterization of Tin Selenide Thin Films Deposited at Room Temperature Using Thermal Evaporation Method
| Автори | N. Kumar1 , V. Sharma1, U. Parihar1 , R. Sachdeva1 , N. Padha1 , C.J. Panchal2 |
| Приналежність | 1 Jammu University, Department of Physics and Electronics, Ambadkar Road, 180006, Jammu, India 2 M.S. University of Baroda, Faculty of Technology and Engineering, Vadodara, 390-00 India |
| Е-mail | nareshpadha@yahoo.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 1 |
| Дати | Received 04 February 2011, published online 23 March 2011 |
| Посилання | N. Kumar, V. Sharma, U. Parihar, et al., J. Nano- Electron. Phys. 3 No1, 117 (2011) |
| DOI | |
| PACS Number(s) | 61.05.C – , 68.37.Hk |
| Ключові слова | Tin selnide, Thin films (60) , Substrate temperature (2) , XRD (90) , SEM (112) , EDAX (9) , Transmission analysis, Electrical resisivity. |
| Анотація |
Tin Selenide (SnSe) is an important IV-VI compound semiconducting material used for various devices like memory switching, an efficient solar cell and holographic recording systems. SnSe thin films of the thickness of 100 nm were deposited by thermal evaporation method on a Glass substrate at room temperature. The prepared samples were investigated for structural, compositional, morphological and optical characte-rization respectively by using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and transmission measurements. Thus deposited films showed a good polycrystalline quality having preferred (111) orientation with uniformly distributed spherical grains having size 16nm.The grown film identified as P- types by hot probe method. The films were found to have direct band transition having an optical bandgap (Eg) of 1.92 eV at room temperature. The temperature depended electrical resistivity (ρ) determined by using the two probe method, found to be 390 Ω·m at room temperature. |
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Перелік посилань |
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