Synthesis and Characterization of Co-Doped SnO2/TiO2 Semiconductor Nano Crystallites via Sol-Gel Method
| Автори | H.Z.R. Hamoon1 , G.S. Devi1 , H. Beigi2, J.V.R. Rao2, K.R. Reddy1 , A. Nanaji1 |
| Приналежність | 1 Inorganic and Physical Chemistry division, Indian Institute of Chemical Technology, Tarnaka, Hyderabad, AP, India 2 Center for Nano Science & Technology, Institute of Science and Technology, JNTUH, Kukatpally, Hyderabad, 500085, AP, India |
| Е-mail | hedayatzadehamoon@yahoo.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 1 |
| Дати | Received 04 February 2011, in final form 20 March 2011, published online 22 March 2011 |
| Посилання | H.Z.R. Hamoon, G.S. Devi, H. Beigi, et al., J. Nano- Electron. Phys. 3 No1, 59 (2011) |
| DOI | |
| PACS Number(s) | 81.20.Fw, 81.07.Bc, 07.07.Df. |
| Ключові слова | SnO2/TiO2, Co-doped (2) , Semiconductor (62) , XRD (90) , Nanoparticle (77) . |
| Анотація |
SnO2/TiO2 nano particles are novel wide band gap semiconductors with modified applications of SnO2 and TiO2 in some fields including gas sensing, photo catalytic, solar cells and so on. The Co-doped SnO2/TiO2 nano particles were obtained via sol-gel method with different amounts of doping material as 2.5 %, 6 % and 10 mol %. The crystallite sizes of resulting material were from 3.8 nm for 0.1 wt % Co-doped SnO2/TiO2 to 19.1 nm for un-doped. Morphology and nanostructure of the crystalline SnO2/TiO2 nano particles were characterized by means of X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), Thermal gravimetric analysis (TGA), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). It has been shown that fine semiconductor nano structures were formed. |
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Перелік посилань |
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