The Temperature Dependence of the Quadratic Proportionality Factor of P Diffusivity in Germanium with the Free Electron Density

Authors A. Souigat1,2 , M.K. Bechki1, D. Slimani1

1Ecole Normale Supérieure de Ouargla, Algeria

2Lab. Développement des Energies Nouvelles et Renouvelables en Zones Aride, Univ Ouargla, Fac. des Mathématiques et des Sciences de la Matière, 30000 Ouargla, Algeria

Issue Volume 11, Year 2019, Number 6
Dates Received 25 August 2019; revised manuscript received 06 December 2019; published online 13 December 2019
Citation A. Souigat, M.K. Bechki, D. Slimani, J. Nano- Electron. Phys. 11 No 6, 06006 (2019)
PACS Number(s) 68.55.Ln, 85.40.Ry
Keywords Phosphorus, Diffusion (11) , Proportionality factor, Germanium (3) .

High intrinsic carrier mobility, small band gap for germanium and possible monolithic integration with Si based devices have prompted renewed interest in germanium to continue the historic progress of CMOS devices. To obtain efficient germanium-based electronic devices, it is necessary to understand the dopant diffusion in this semiconductor. Up to now, n-type dopant diffusion in germanium at most is modeled by diffusivity proportional to the square of the free electron density (n). This study determine the temperature dependence of the quadratic proportionality factor of the P diffusivity with the free electron density, through simulations of experimental P diffusion profiles in the temperature range from 650 to 870 °C. Accurate simulation is achieved within that temperature range, taking into account the quadratic proportionality between the phosphorus diffusivity and the free electron density.

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