Laser-induced Point Defects in CdTe:Mn Single Crystals Irradiated by IR Laser

Authors S.V. Plyatsko1, Yu.S. Gromovyi1, O.M. Stril’chuk1, L.V. Rashkovets’kyi1, Z.I. Zaharuk2

1V.E. Lashkaryov Institute of Semiconductor Physics of NASU, Kyiv, Ukraine

2Y. Fedkovych Chernivtsi National University, Chernivtsi, Ukraine

Issue Volume 11, Year 2019, Number 6
Dates Received 20 December 2018; revised manuscript received 08 December 2019; published online 13 December 2019
Citation S.V. Plyatsko, Yu.S. Gromovyi, et al., J. Nano- Electron. Phys. 11 No 6, 06005 (2019)
PACS Number(s) 61.72.Ji, 61.72.Vv, 42.62. – b
Keywords Semiconductors (24) , Point defects, Impurities, CdTe (9) , Laser interactions, Photoluminescence (17) , Paramagnetic resonance, Conductivity (42) , Optical transmittance.

The electrical characteristics of CdTe:Mn n-type single crystals with an initial resistivity of 100 Ω cm (300 K), the dependence of the EPR spectra and low-temperature photoluminescence on the impurity concentration and temperature were studied. Manganese impurity localization in the crystal lattice and depth of impurity states are determined. No exchange interaction between the manganese ions is observed (within the concentration of introduced manganese NMn  5  1018 cm–3). Manganese occupies vacancies or replaces cadmium in the crystal lattice. The effect of IR laser radiation (with radiation quantum energy ħω much lower than the band gap energy Eg and radiation power density W below the critical value) on the physical properties of n-CdTe:Mn single crystals is shown experimentally. It is established that variation of spectrum of point defects is due to interaction of the ЕН field of laser wave with inclusions of native components as well as background and specially introduced impurities.

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